推薦產品
描述
hexagonal phase
品質等級
化驗
≥97.5%
形狀
powder
粒徑
−400 mesh
mp
2700 °C (lit.)
密度
3.22 g/mL at 25 °C (lit.)
SMILES 字串
[C-]#[Si+]
InChI
1S/CSi/c1-2
InChI 密鑰
HBMJWWWQQXIZIP-UHFFFAOYSA-N
尋找類似的產品? 前往 產品比較指南
一般說明
碳化硅(SiC)是一种半导体材料,具有密闭堆积的硅和碳双层结构。它具有出色的热机械和电性能,这使得其可用于多种电子和光电应用中。
應用
SiC主要可作为基材用于例如微结构、 光电设备(发光二极管(LED)、紫外线检测器)、 高温电子设备(核电子设备)、 和高频设备等应用中。
儲存類別代碼
11 - Combustible Solids
水污染物質分類(WGK)
nwg
閃點(°F)
Not applicable
閃點(°C)
Not applicable
個人防護裝備
dust mask type N95 (US), Eyeshields, Gloves
客戶也查看了
Emanuele Rizzuto et al.
Sensors (Basel, Switzerland), 19(23) (2019-11-27)
In this paper, the characterization of the main techniques and transducers employed to measure local and global strains induced by uniaxial loading of murine tibiae is presented. Micro strain gauges and digital image correlation (DIC) were tested to measure local
Fundamentals of silicon carbide technology: growth, characterization, devices and applications
Fundamentals of silicon carbide technology: growth, characterization, devices and applications (2014)
Properties of silicon carbide (1995)
Optical polarization of nuclear spins in silicon carbide
Falk AL, et al.
Physical Review Letters, 114(24), 247603-247603 (2015)
4H-SiC UV photo detectors with large area and very high specific detectivity
Yan F, et al.
IEEE J. Quant. Elect., 40(9), 1315-1320 (2004)
文章
Advanced Inorganic Materials for Solid State Lighting
Global Trade Item Number
庫存單位 | GTIN |
---|---|
357391-1KG | 4061835562824 |
357391-250G | 4061831812428 |
我們的科學家團隊在所有研究領域都有豐富的經驗,包括生命科學、材料科學、化學合成、色譜、分析等.
聯絡技術服務