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重要文件

204536

Sigma-Aldrich

氧化钽(V)

<20 μm, 99.99% trace metals basis

同義詞:

五氧化钽

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About This Item

線性公式:
Ta2O5
CAS號碼:
分子量::
441.89
EC號碼:
MDL號碼:
分類程式碼代碼:
12352303
eCl@ss:
38180602
PubChem物質ID:
NACRES:
NA.23

化驗

99.99% trace metals basis

形狀

powder

反應適用性

reagent type: catalyst
core: tantalum

粒徑

<20 μm

密度

8.2 g/mL at 25 °C (lit.)

應用

battery manufacturing

SMILES 字串

O=[Ta](=O)O[Ta](=O)=O

InChI

1S/5O.2Ta

InChI 密鑰

PBCFLUZVCVVTBY-UHFFFAOYSA-N

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一般說明

Ta2O5 (tantalum pentoxide) is a transition-metal oxide with a high refractive index (n=2.02–2.16), high dielectric constant, wide bandgap (4.0–4.5 eV), and wide transmission spectrum. It is a non-silicon dielectric material used in microelectronic devices and the ideal capacitive material for next-generation multi-chip modules. Due to its high acidity, it can serve as a catalyst for the oxidation of alkanes and pollution reduction. In addition, it is successfully used for the anode oxidization of electrodes in lithium batteries.

應用


  • Double-layered nanoparticle stacks for spectro-electrochemical applications.: This study discusses the development of double-layered nanoparticle stacks incorporating Tantalum(V) oxide, which have significant potential in spectro-electrochemical applications due to their high refractive index and dielectric properties (Frank et al., 2012).

儲存類別代碼

11 - Combustible Solids

水污染物質分類(WGK)

nwg

閃點(°F)

Not applicable

閃點(°C)

Not applicable

個人防護裝備

Eyeshields, Gloves, type N95 (US)


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文章

As the electronic industry continues to move towards smaller and smaller devices, researchers must continually strive for technologies to deposit electronic materials with precision at ever-smaller scales. This trend has lead to a variety of techniques used in the microelectronics industry to layer materials with precision thicknesses, sometimes down to even the atomic level.

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