微电子学与纳米电子学
作为电子学的分支领域，微电子学和纳米电子学范畴的电子元件的典型标称尺寸分别为100至0.1微米（微电子学）和100纳米或更小（纳米电子学）。由于微芯片的密度显著提高，如今的先进电子设备具备了内存存储能力。通过减小场效应晶体管的尺寸，集成电路中可以容纳更多的元件，从而能打造重量轻、能耗低且功能更强大、能效更高的电子设备。
根据摩尔定律，单个芯片上可以集成的晶体管数目每两年便会增加一倍。自1965做出该预测以来，半导体制造技术曾按照此速率不断发展，带动了整个行业的革新。然而如今电子元件尺寸缩小的脚步已经放缓，制造亚微米级电子元件的主要挑战在于晶体管栅极的设计，它控制了通道内的电流。电子元件越小，制造难度就越大。物理和量子效应会使材料性质发生从宏观到纳米尺度的改变，从而影响原子间的相互作用和量子力学性质。
碳纳米管、氮化硼纳米管、量子点和石墨烯添加剂等创新材料的出现推动了纳米技术和微技术的小型化发展。如今，这些材料以及其他类似的材料都可在极其微小的尺度下高精度地塑形和操控。利用全新技术，可使电子材料以精确的厚度沉积和分层，甚至在原子尺度上也是如此。薄膜半导体设备制造技术使用导电、半导电和绝缘材料来大规模且低成本地实现高级功能。纳米电子学的现代制造方法包括图形成型（平板印刷术）、蚀刻、薄膜沉积和掺杂技术。
新兴研究领域关注纳米技术的新方法和量子力学效应。分子电子学以单个分子为电子元件实现与大尺寸电极的电接触。自旋电子学，也称自旋输运电子学，通过磁场和电场操控电子的自旋性质来产生自旋极化电流。与仅使用电荷相比，这种电流可实现更高的数据传输速率、存储容量、存储密度以及处理能力。
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