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104817

Sigma-Aldrich

Trichloro(octadecyl)silane

≥90%

Synonym(s):

Octadecyltrichlorosilane

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About This Item

Linear Formula:
CH3(CH2)17SiCl3
CAS Number:
Molecular Weight:
387.93
Beilstein:
1778847
EC Number:
MDL number:
UNSPSC Code:
12352103
PubChem Substance ID:
NACRES:
NA.23

vapor density

>1 (vs air)

vapor pressure

<5 mmHg ( 20 °C)

Assay

≥90%

refractive index

n20/D 1.459 (lit.)

bp

223 °C/10 mmHg (lit.)

density

0.984 g/mL at 25 °C (lit.)

SMILES string

CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl

InChI

1S/C18H37Cl3Si/c1-2-3-4-5-6-7-8-9-10-11-12-13-14-15-16-17-18-22(19,20)21/h2-18H2,1H3

InChI key

PYJJCSYBSYXGQQ-UHFFFAOYSA-N

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General description

Self-assembled monolayers (SAMs) are used as passivating layers and for controlled modification of surface properties of substrates. Their main applications include wetting, adhesion, friction, chemical sensing and ultra-fine scale lithography. Alkytrichlorosilanes are commonly used for synthesising SAMs on Silicon dioxide which are commonly used in microelectronics. Trichloro(octadecyl)silane is a widely used alkyltrichlorosilane.
Trichloro(octadecyl)silane (OTS) is an alkoxy silane with a large alkyl and polar head group, mainly used as a self-assembled monolayer (SAM) on a variety of nanoparticles and metal oxides substrates. It provides an amphiphilic character that can be used in molecular and opto-electronics applications.

Application

OTS can be used to silanize poly(vinylalcohol) (PVA)/nanosilica (SiO2) nanofibers that can provide a hydrophobic coating on the wooden surfaces by electrospinning. It can also be used as a SAM on the surface of silica (SiO2) gate dielectric for the development of organic field effect transistor (OFETs). It may also be used in a variety of applications like improving the electrochemical performance for dye sensitized solar cells and for the development of metal insulated field effect transistors.

Pictograms

Corrosion

Signal Word

Danger

Hazard Statements

Hazard Classifications

Eye Dam. 1 - Skin Corr. 1B

Storage Class Code

8A - Combustible corrosive hazardous materials

WGK

WGK 1

Flash Point(F)

404.6 °F - closed cup

Flash Point(C)

207 °C - closed cup

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Fabrication and Characterization of Flexible Metal-Insulator-Semiconductor Field Effect Transistor (MISFET) using Organic ODS and Inorganic ZrO2 as Dielectric Stack Materials.
Haridas PP, et al.
International Journal of Trend in Research and Development, 4, 2394-2394 (2017)
Mark Ilton et al.
Nature communications, 9(1), 1172-1172 (2018-03-23)
Hydrodynamic slip, the motion of a liquid along a solid surface, represents a fundamental phenomenon in fluid dynamics that governs liquid transport at small scales. For polymeric liquids, de Gennes predicted that the Navier boundary condition together with polymer reptation
Structural evaluation of 5, 5'-bis (naphth-2-yl)-2, 2'-bithiophene in organic field-effect transistors with n-octadecyltrichlorosilane coated SiO2 gate dielectric.
Ejdrup A, et al.
Langmuir, 34 (23), 6727?6736-6727?6736 (2018)
Surface Characteristics of Silicon Nanowires/Nanowalls Subjected to Octadecyltrichlorosilane Deposition and n-octadecane Coating.
Yilbas BS, et al.
Scientific reports, 6, 38678-38678 (2016)
Atul S M Tripathi et al.
ACS applied materials & interfaces, 11(31), 28088-28095 (2019-07-17)
Large area (>20 cm × 2 cm)-oriented thin films of PQT-C12 with varying molecular weight and polydispersity index (PDI) were fabricated by the ribbon-shaped floating film transfer method aiming toward their application as an active semiconductor element of organic field

Articles

Flexible electronic circuits and displays based on organic active materials are future generations of products that may eventually enter mainstream electronics market.

Protocols

Fabrication of Poly(triaryl amine) Field-effect Transistors

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