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描述
Growth method: roll-to-roll CVD
Wafer: SiO2 (300nm) Si
Number of layer: Monolayer
Raman intensity 2D/G: ≥1.5
特點
avg. no. of layers 1
薄層電阻
280 Ω/sq ±10%
尺寸
110 μm × 110 μm ± 10% , grain size
表面覆盖率
surface coverage >98%
透射率
>97%
半導體屬性
(mobility>3000 cm2/V·s) (Hall effect measurements)
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一般說明
應用
The roll-to-roll process allows continuous, large scale graphene production.
This large grain size graphene product on silicon wafer is ready to use, helps you minimize process time, and increase success rate. This product with low sheet resistance would enable unmatched reproducibility and allow high performance for CVD graphene based FET, CVD graphene based sensors, and heterostructure based micro/nano electronics.
Application examples:
- Ultrafast Transistor
- Optical devices
- Bio/Gas Sensor
- Transparent Electrode
- Flexible Display
- Smart Coating
- Thermal management
注意
Keep away from contamination, heat, dust and flame etc.
儲存和穩定性
法律資訊
儲存類別代碼
11 - Combustible Solids
水污染物質分類(WGK)
WGK 3
商品
Dr. Xiang’s and Maruyama’s review presents the most recent research activities on 1D vdWHs, including the candidate materials, the synthetic techniques, and characterization methods. The optoelectronic applications are discussed in detail for different constructions of the 1D vdWHs-based devices (FETs, sensors, LEDs, photovoltaic devices, and light detection). Some challenges and perspectives for future development and applications of 1D vdWHs are also proposed to conclude the review.
我们的科学家团队拥有各种研究领域经验,包括生命科学、材料科学、化学合成、色谱、分析及许多其他领域.
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