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Key Documents

900527

Sigma-Aldrich

Doped graphene

nitrogen-doped, avg. no. of layers, 1 ‑ 5

别名:

N-Doped graphene, NDG, NG

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About This Item

分類程式碼代碼:
12141908
NACRES:
NA.23

product name

Nitrogen-doped graphene, avg. no. of layers, 1 ‑ 5

化驗

≥95%

品質等級

形狀

powder

特點

avg. no. of layers 1 ‑ 5

成份

Carbon, 85-95%
Nitrogen, 2.0-4.0%
Oxygen, <7.5%

表面積

>500 m2/g , BET

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一般說明

  • Typical thickness: 1-5 layers.
  • Typical size : 0.5-5 μm.

應用

  • Electro catalyst.
  • Field-effect transistors.
  • Sensors.
  • Lithium ion batteries.
  • Supercapacitors.

儲存類別代碼

11 - Combustible Solids

水污染物質分類(WGK)

WGK 3

閃點(°F)

Not applicable

閃點(°C)

Not applicable


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Andrea Zitolo et al.
Nature materials, 14(9), 937-942 (2015-08-11)
While platinum has hitherto been the element of choice for catalysing oxygen electroreduction in acidic polymer fuel cells, tremendous progress has been reported for pyrolysed Fe-N-C materials. However, the structure of their active sites has remained elusive, delaying further advance.
Review on recent progress in nitrogen-doped graphene: synthesis, characterization, and its potential applications.
Wang, et al.
ACS Catalysis, 2(5), 781-794 (2012)
Liangti Qu et al.
ACS nano, 4(3), 1321-1326 (2010-02-17)
Nitrogen-doped graphene (N-graphene) was synthesized by chemical vapor deposition of methane in the presence of ammonia. The resultant N-graphene was demonstrated to act as a metal-free electrode with a much better electrocatalytic activity, long-term operation stability, and tolerance to crossover
Mohi Uddin Jewel et al.
Molecules (Basel, Switzerland), 25(5) (2020-03-04)
Fully inkjet-printed device fabrication is a crucial goal to enable large-area printed electronics. The limited number of two-dimensional (2D) material inks, the bottom-gated structures, and the low current on/off ratio of thin-film transistors (TFTs) has impeded the practical applications of

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