形狀
liquid
成份
Ru, 33.9-36.4% gravimetric
反應適用性
core: ruthenium
reagent type: catalyst
折射率
n20/D 1.5870 (lit.)
bp
100 °C/0.01 mmHg (lit.)
mp
6 °C (lit.)
密度
1.3412 g/mL at 25 °C (lit.)
儲存溫度
−20°C
SMILES 字串
[Ru].CC[C]1[CH][CH][CH][CH]1.CC[C]2[CH][CH][CH][CH]2
InChI
1S/2C7H9.Ru/c2*1-2-7-5-3-4-6-7;/h2*3-6H,2H2,1H3;
InChI 密鑰
VLTZUJBHIUUHIK-UHFFFAOYSA-N
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應用
双(乙基环戊二烯基)钌(II)(Ru(EtCp)2),一种金属有机物,可用作Ru薄膜和排列一致的RuO2纳米棒的原子层沉积前体。
訊號詞
Warning
危險聲明
危險分類
Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3
標靶器官
Respiratory system
儲存類別代碼
10 - Combustible liquids
水污染物質分類(WGK)
WGK 3
閃點(°F)
>199.9 °F - closed cup
閃點(°C)
> 93.3 °C - closed cup
個人防護裝備
Eyeshields, Gloves, type ABEK (EN14387) respirator filter
Growth and characterization of the coexistence of vertically aligned and twinned V-shaped RuO2 nanorods on nanostructural TiO2 template
J. Alloy Compounds, 485(1-2), 524-528 (2009)
In-situ real-time ellipsometric investigations during the atomic layer deposition of ruthenium: A process development from [(ethylcyclopentadienyl)(pyrrolyl) ruthenium] and molecular oxygen.
Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, And Films, 30(1), 01A151-01A151 (2012)
ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems.
Microelectronic Engineering, 88(5), 684-689 (2011)
Thermal atomic layer deposition (ALD) of Ru films for Cu direct plating.
Journal of the Electrochemical Society, 158(6), D351-D356 (2011)
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