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Merck

593044

Sigma-Aldrich

氮化铝

nanopowder, <100 nm particle size

别名:

Aluminium nitride

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About This Item

线性分子式:
AlN
CAS号:
分子量:
40.99
EC號碼:
MDL號碼:
分類程式碼代碼:
12352302
PubChem物質ID:
NACRES:
NA.23

形狀

nanopowder

品質等級

粒徑

<100 nm

mp

>2200 °C (lit.)

密度

3.26 g/mL at 25 °C (lit.)

SMILES 字串

N#[Al]

InChI

1S/Al.N

InChI 密鑰

PIGFYZPCRLYGLF-UHFFFAOYSA-N

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一般說明

Aluminum nitride (AlN) is a wide bandgap semiconductor with exceptional thermal conductivity, high electrical insulation, and piezoelectric properties. It is widely used in electronics, such as in high-power and high-frequency devices, as well as in optoelectronics for UV light emitters. Additionally, AlN is utilized in biomedical devices due to its biocompatibility.

應用

  • 该综述探索氮化铝对于半导体材料的重要特性,讨论它的宽带隙和较大的透明度范围,适合紫外到中红外光谱应用(Li et al., 2021)。

象形圖

Health hazardEnvironment

訊號詞

Danger

危險聲明

危險分類

Aquatic Acute 1 - Aquatic Chronic 1 - STOT RE 1 Inhalation

標靶器官

Lungs

儲存類別代碼

4.3 - Hazardous materials which set free flammable gases upon contact with water

水污染物質分類(WGK)

WGK 3

閃點(°F)

Not applicable

閃點(°C)

Not applicable

個人防護裝備

dust mask type N95 (US), Eyeshields, Gloves


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分析证书(COA)

Lot/Batch Number

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其他客户在看

Electrical and thermophysical properties of epoxy/aluminum nitride nanocomposites: Effects of nanoparticle surface modification
Peng W, et al.
Composites Part A: Applied Science and Manufacturing, 41(9), 1201-1209 (2010)
Shuangxi Nie et al.
Nanomaterials (Basel, Switzerland), 9(8) (2019-08-07)
Nanocomposites consisting of cellulose nanofibrils (CNFs) and nano-aluminum nitride (AlN) were prepared using a simple vacuum-assisted filtration process. Bleached sugarcane bagasse pulp was treated with potassium hydroxide and sodium chlorite, and was subsequently ultra-finely ground and homogenized to obtain CNFs.
Nanocrystalline aluminum nitride: II, sintering and properties.
Panchula ML and Ying JY
American Chemical Science Journal, 86(7), 1121-1127 (2003)
Morphologically selective synthesis of nanocrystalline aluminum nitride.
Haber JA, et al.
Chemistry of Materials, 10(12), 4062-4071 (1998)
Norio Iizuka et al.
Optics express, 17(25), 23247-23253 (2010-01-07)
Spot-size converters for an all-optical switch utilizing the intersubband transition in GaN/AlN multiple quantum wells are studied with the purpose of reducing operation power by improving the coupling efficiency between the input fiber and the switch. With a stair-like spot-size

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