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Merck

579211

Sigma-Aldrich

四(二甲胺基)锆(IV)

electronic grade, ≥99.99% trace metals basis

别名:

TDMAZ, 四(二甲氨基)锆(IV)

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About This Item

线性分子式:
[(CH3)2N]4Zr
CAS号:
分子量:
267.53
MDL號碼:
分類程式碼代碼:
12352103
PubChem物質ID:
NACRES:
NA.23

等級

electronic grade

品質等級

化驗

≥99.99% trace metals basis

形狀

solid

反應適用性

core: zirconium

mp

57-60 °C (lit.)

儲存溫度

2-8°C

SMILES 字串

CN(C)[Zr](N(C)C)(N(C)C)N(C)C

InChI

1S/4C2H6N.Zr/c4*1-3-2;/h4*1-2H3;/q4*-1;+4

InChI 密鑰

DWCMDRNGBIZOQL-UHFFFAOYSA-N

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應用

四(二甲基氨基)锆 (IV)可用作锆原子层沉积的前驱物,其应用范围从气体传感器到微电子学中的高k电介质。

象形圖

FlameExclamation mark

訊號詞

Danger

危險分類

Eye Irrit. 2 - Flam. Sol. 1 - Skin Irrit. 2 - STOT SE 3 - Water-react 2

標靶器官

Respiratory system

安全危害

儲存類別代碼

4.3 - Hazardous materials which set free flammable gases upon contact with water

水污染物質分類(WGK)

WGK 3

閃點(°F)

No data available

閃點(°C)

No data available

個人防護裝備

Eyeshields, Gloves, type P3 (EN 143) respirator cartridges


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分析证书(COA)

Lot/Batch Number

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Atomic layer deposition of ZrO2 and HfO2 nanotubes by template replication
Gu D, et al.
Electrochemical and Solid-State Letters, 12.4, K25-K28 (2009)
Surface morphology and crystallinity control in the atomic layer deposition (ALD) of hafnium and zirconium oxide thin films.
Hausmann DM & Gordon RG
Journal of Crystal Growth, 249.1, 251-261 (2003)

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