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品質等級
形狀
powder or crystals
solid
反應適用性
core: germanium
reagent type: reductant
mp
40-43 °C (lit.)
SMILES 字串
c1ccc(cc1)[GeH](c2ccccc2)c3ccccc3
InChI
1S/C18H16Ge/c1-4-10-16(11-5-1)19(17-12-6-2-7-13-17)18-14-8-3-9-15-18/h1-15,19H
InChI 密鑰
NXHORDQDUDIXOS-UHFFFAOYSA-N
一般說明
三苯基氢化锗是氢供体。
應用
它可用于(Z)烯烃的异构化。1 TEMPO(2,2,6,6-四甲基哌啶基氧基)与三苯基氢化锗反应形成其相应的三氢锗基自由基。2
包裝
玻璃瓶封装
訊號詞
Warning
危險分類
Acute Tox. 4 Dermal - Acute Tox. 4 Inhalation - Acute Tox. 4 Oral
儲存類別代碼
11 - Combustible Solids
水污染物質分類(WGK)
WGK 3
閃點(°F)
Not applicable
閃點(°C)
Not applicable
個人防護裝備
dust mask type N95 (US), Eyeshields, Gloves
Dalton transactions (Cambridge, England : 2003), 45(11), 4716-4728 (2016-02-11)
The dihydrido germyl complex cis,fac-[Rh(GePh3)(H)2(PEt3)3] (2) was synthesized by an oxidative addition of HGePh3 at [Rh(H)(PEt3)3] (1). Treatment of 2 with neohexene generated the rhodium(i) germyl complex [Rh(GePh3)(PEt3)3] (3). Alternatively, treatment of the methyl complex [Rh(CH3)(PEt3)3] (4) with HGePh3 furnished
Palladium (II)-catalyzed isomerization of olefins with tributyltin hydride.
The Journal of Organic Chemistry, 73(14), 5424-5426 (2007)
Physical chemistry chemical physics : PCCP, 17(10), 6919-6924 (2015-02-14)
Here we describe a relatively facile synthetic protocol for the formation of Si-Ge and Si-Ge-Si1-xGex axial nanowire heterostructures. The wires are grown directly on substrates with an evaporated catalytic layer placed in the vapour zone of a high boiling point
Nano letters, 16(1), 374-380 (2015-12-18)
Herein, we report the formation of multisegment Si-Ge axial heterostructure nanowires in a wet chemical synthetic approach. These nanowires are grown by the liquid injection of the respective silicon and germanium precursors into the vapor phase of an organic solvent
Dalton transactions (Cambridge, England : 2003), 45(43), 17495-17507 (2016-11-02)
The reaction of the silyl complex [Rh{Si(OEt)
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