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Sigma-Aldrich

Tris(tert-butoxy)silanol

99.999%

Synonym(s):

TBS

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About This Item

Linear Formula:
((CH3)3CO)3SiOH
CAS Number:
18166-43-3
Molecular Weight:
264.43
MDL number:
MFCD00271024
UNSPSC Code:
12352103
PubChem Substance ID:
24879332
NACRES:
NA.23

Assay

99.999%

form

solid

bp

205-210 °C (lit.)

mp

63-65 °C (lit.)

SMILES string

CC(C)(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C

InChI

1S/C12H28O4Si/c1-10(2,3)14-17(13,15-11(4,5)6)16-12(7,8)9/h13H,1-9H3

InChI key

HLDBBQREZCVBMA-UHFFFAOYSA-N

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General description

Tris(tert-butoxy)silanol can react with various metal alkyl amides to act as precursors for vapor deposition metal silicates. It also acts as a suitable precursor for deposition of silica.

Application

Tris(tert-alkoxy)silanols reacts with tetrakis(dimethylamino)-hafnium vapor(Hf(N(CH3)2)4) for vapor phase deposition of hafnium silicate glass films. Tris(tert-butoxy)silanol is used for atomic layer deposition (ALD) of highly conformal layers of amorphous silicon dioxide and aluminum oxide nanolaminates.

Storage Class Code

11 - Combustible Solids

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Rapid vapor deposition of highly conformal silica nanolaminates.
Hausmann D, et al.
Science, 298(5592), 402-406 null
Rapid SiO2 Atomic Layer Deposition Using Tris(tert-pentoxy)silanol.
Burton B, et al.
Chemistry of Materials, 20, 7031-7043 (2008)
Vapor deposition of metal oxides and silicates: Possible gate insulators for future microelectronics.
Gordon G, et al.
Chemistry of Materials, 13(8), 2463-2464 (2001)
Jonathan Stewart et al.
Modern pathology : an official journal of the United States and Canadian Academy of Pathology, Inc, 28(3), 428-436 (2014-09-27)
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Pedro A Dionísio et al.
Neurobiology of aging, 36(1), 228-240 (2014-12-03)
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