303518
Tantalum(V) oxide
99% trace metals basis
Synonym(s):
Tantalum pentoxide
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About This Item
Linear Formula:
Ta2O5
CAS Number:
Molecular Weight:
441.89
EC Number:
MDL number:
UNSPSC Code:
12352303
PubChem Substance ID:
NACRES:
NA.23
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Quality Level
Assay
99% trace metals basis
form
powder
reaction suitability
reagent type: catalyst
core: tantalum
density
8.2 g/mL at 25 °C (lit.)
application(s)
battery manufacturing
SMILES string
O=[Ta](=O)O[Ta](=O)=O
InChI
1S/5O.2Ta
InChI key
PBCFLUZVCVVTBY-UHFFFAOYSA-N
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General description
Tantalum pentoxide is dielectric in nature making it useful for making capacitors in the electronics industry.
Application
Tantalum oxide is intermixed with silicon in gate dielectric structures. It may be used to synthesize hexagonally packed mesoporous tantalum oxide molecular sieves.Ion-beam sputter deposition of tantalum oxide films was investigated for possible optical coating applications.It may be used in making optical glass for lenses and in electronic circuits.
Storage Class Code
11 - Combustible Solids
WGK
nwg
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
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Customers Also Viewed
Synthesis and characterization of hexagonally packed mesoporous tantalum oxide molecular sieves.
Antonelli DM and Ying JY
Chemistry of Materials, 8(4), 874-881 (1996)
Intermixing at the tantalum oxide/silicon interface in gate dielectric structures.
Alers GB, et al.
Applied Physics Letters, 73(11), 1517-1519 (1998)
Effects of oxygen content on the optical properties of tantalum oxide films deposited by ion-beam sputtering.
H Demiryont et al.
Applied optics, 24(4), 490-490 (1985-02-15)
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