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775703

Sigma-Aldrich

Molybdenum(VI) oxide

nanopowder, 100 nm (TEM), 99.5% trace metals basis

Synonym(s):

Molybdenum trioxide

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About This Item

Linear Formula:
MoO3
CAS Number:
1313-27-5
Molecular Weight:
143.94
EC Number:
215-204-7
MDL number:
MFCD00003469
UNSPSC Code:
12352302
PubChem Substance ID:
329767782
NACRES:
NA.23

Quality Level

100

Assay

99.5% trace metals basis

form

nanopowder

particle size

100 nm (TEM)

mp

795 °C (lit.)

SMILES string

O=[Mo](=O)=O

InChI

1S/Mo.3O

InChI key

JKQOBWVOAYFWKG-UHFFFAOYSA-N

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Application

Molybdenum oxide nanoparticles have been studied in photocatalytic systems, as gas sensors for automobiles and as anodes in lithium ion batteries.
Precursor to LAMOX fast ion conductors and superconductors.
Used in the solid state synthesis of a remarkable ternary, reduced molybdenum oxide, Pr4Mo9O18, whose structure contains previously unknown Mo7, Mo13 and Mo19 clusters. The new cluster product is a small band gap semiconductor.

Pictograms

Health hazardExclamation mark
GHS08,GHS07

Signal Word

Warning

Hazard Statements

H319,H335,H351

Hazard Classifications

Carc. 2 - Eye Irrit. 2 - STOT SE 3

Target Organs

Respiratory system

Storage Class Code

11 - Combustible Solids

WGK

WGK 1

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

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Certificates of Analysis (COA)

Lot/Batch Number
MKCQ9817
MKCN0341
MKCJ4234
MKCD1915
3851070116

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Prasad, A. K.; et al.
J. Mater. Sci., 38, 4347-4352 (2003)
Lee, S.H.; et al.
Advanced Materials, 20, 3627-3632 (2008)
Song, K.Y.; et al.
Chemistry of Materials, 13, 2349-2355 (2001)
Patrick R Brown et al.
Nano letters, 11(7), 2955-2961 (2011-06-15)
The ability to engineer interfacial energy offsets in photovoltaic devices is one of the keys to their optimization. Here, we demonstrate that improvements in power conversion efficiency may be attained for ZnO/PbS heterojunction quantum dot photovoltaics through the incorporation of
Seiichiro Murase et al.
Advanced materials (Deerfield Beach, Fla.), 24(18), 2459-2462 (2012-04-11)
An MoO(3) film spin-coated from a solution prepared by an extremely facile and cost-effective synthetic method is introduced as an anode buffer layer of bulk-heterojunction polymer photovoltaic devices. The device efficiency using the MoO(3) anode buffer layer is comparable to
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