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920932

Sigma-Aldrich

Monolayer hexagonal Boron Nitride (hBN) on Si/SiO2 wafer

diam. 100 mm (4 in.)

Synonym(s):

Boronitrene, Hexagonal boron nitride monolayer, Single-layer hexagonal boron nitride, White graphene

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About This Item

Empirical Formula (Hill Notation):
BN
CAS Number:
10043-11-5
Molecular Weight:
24.82
MDL number:
MFCD00008279
UNSPSC Code:
12352302
NACRES:
NA.23

description

Monolayer h-BN
hBN Coverage: 100% with sporadic adlayers
Bandgap: 5.97 eV
Raman Peak: 1370 /cm-1
Orientation: <1-0-0>
Metal Impurities: 1.00e10 – 5.00e10 (at/cm2)
Substrate
Type/Doping: P/B
Wafer Thickness : 500 ± 50 μm
Oxide Thickness: 300 nm
Resistivity: 1 – 10 (ohm/cm)

Quality Level

100

diam.

100 mm (4 in.)

grain size

>4 μm

InChI

1S/BN/c1-2

InChI key

PZNSFCLAULLKQX-UHFFFAOYSA-N

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Application

Monolayer hexagonal boron nitride (h-BN), also known as ″white graphene″, is a wide-bandgap 2D crystal (∼6 eV that can be tuned to ∼2 eV) with exceptional strength, large oxidation resistance at high temperatures, and optical functionalities. Among its potential applications are:
  • Two-dimensional electronics
  • Nanophotonic and other optoelectronic devices
  • Quantum communication and information science
  • Aerospace industry
  • MEMS and NEMS
  • Micro-/nano- actuators
  • Insulating/transparent coatings.

Storage and Stability

To ensure the maximum shelf life of your hBN sample, it is best stored under vacuum or in inert atmosphere (Argon or Nitrogen) conditions once the vacuum sealed package has been opened.

Storage Class Code

13 - Non Combustible Solids

WGK

WGK 3

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Monolayer to Bulk Properties of Hexagonal Boron Nitride.
Wickramaratne D, et al.
The Journal of Physical Chemistry C, 122(44), 25524-25529 (2018)
Xu-Qian Zheng et al.
Microsystems & nanoengineering, 3, 17038-17038 (2017-07-31)
Atomic layers of hexagonal boron nitride (h-BN) crystal are excellent candidates for structural materials as enabling ultrathin, two-dimensional (2D) nanoelectromechanical systems (NEMS) due to the outstanding mechanical properties and very wide bandgap (5.9 eV) of h-BN. In this work, we report
Kun Ba et al.
Scientific reports, 7, 45584-45584 (2017-04-04)
Monolayer hexagonal boron nitride (h-BN) possesses a wide bandgap of ~6 eV. Trimming down the bandgap is technically attractive, yet poses remarkable challenges in chemistry. One strategy is to topological reform the h-BN's hexagonal structure, which involves defects or grain boundaries

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