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424838

Sigma-Aldrich

Triphenylgermanium hydride

Synonym(s):

Triphenylgermane, Triphenylgermanyl hydride

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About This Item

Linear Formula:
(C6H5)3GeH
CAS Number:
2816-43-5
Molecular Weight:
304.96
EC Number:
220-569-0
MDL number:
MFCD00046034
UNSPSC Code:
12352300
PubChem Substance ID:
24866592
NACRES:
NA.23

Quality Level

100

form

powder or crystals
solid

reaction suitability

core: germanium
reagent type: reductant

mp

40-43 °C (lit.)

SMILES string

c1ccc(cc1)[GeH](c2ccccc2)c3ccccc3

InChI

1S/C18H16Ge/c1-4-10-16(11-5-1)19(17-12-6-2-7-13-17)18-14-8-3-9-15-18/h1-15,19H

InChI key

NXHORDQDUDIXOS-UHFFFAOYSA-N

Related Categories

General description

Triphenylgermanium hydride is a hydrogen donor.

Application

It may be used in the isomerization of (Z) alkene.1 TEMPO (2,2,6,6-Tetramethylpiperidinyloxy) reacts with triphenylgermanium hydride to form its corresponding germyl radical. 2

Packaging

Packaged in glass bottles

Pictograms

Exclamation mark
GHS07

Signal Word

Warning

Hazard Statements

H302 + H312 + H332

Hazard Classifications

Acute Tox. 4 Dermal - Acute Tox. 4 Inhalation - Acute Tox. 4 Oral

Storage Class Code

11 - Combustible Solids

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

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Theresia Ahrens et al.
Dalton transactions (Cambridge, England : 2003), 45(11), 4716-4728 (2016-02-11)
The dihydrido germyl complex cis,fac-[Rh(GePh3)(H)2(PEt3)3] (2) was synthesized by an oxidative addition of HGePh3 at [Rh(H)(PEt3)3] (1). Treatment of 2 with neohexene generated the rhodium(i) germyl complex [Rh(GePh3)(PEt3)3] (3). Alternatively, treatment of the methyl complex [Rh(CH3)(PEt3)3] (4) with HGePh3 furnished
Palladium (II)-catalyzed isomerization of olefins with tributyltin hydride.
Kim IS, et al.
The Journal of Organic Chemistry, 73(14), 5424-5426 (2007)
E Mullane et al.
Physical chemistry chemical physics : PCCP, 17(10), 6919-6924 (2015-02-14)
Here we describe a relatively facile synthetic protocol for the formation of Si-Ge and Si-Ge-Si1-xGex axial nanowire heterostructures. The wires are grown directly on substrates with an evaporated catalytic layer placed in the vapour zone of a high boiling point
Grace Flynn et al.
Nano letters, 16(1), 374-380 (2015-12-18)
Herein, we report the formation of multisegment Si-Ge axial heterostructure nanowires in a wet chemical synthetic approach. These nanowires are grown by the liquid injection of the respective silicon and germanium precursors into the vapor phase of an organic solvent
Theresia Ahrens et al.
Dalton transactions (Cambridge, England : 2003), 45(43), 17495-17507 (2016-11-02)
The reaction of the silyl complex [Rh{Si(OEt)

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