357391
Silicon carbide
−400 mesh particle size, ≥97.5%
Synonym(s):
Carbon silicide, Carborundum, Methanidylidynesilanylium, Silicon monocarbide
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About This Item
Linear Formula:
SiC
CAS Number:
Molecular Weight:
40.10
EC Number:
MDL number:
UNSPSC Code:
12352300
PubChem Substance ID:
NACRES:
NA.23
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description
hexagonal phase
Assay
≥97.5%
form
powder
particle size
−400 mesh
mp
2700 °C (lit.)
density
3.22 g/mL at 25 °C (lit.)
SMILES string
[C-]#[Si+]
InChI
1S/CSi/c1-2
InChI key
HBMJWWWQQXIZIP-UHFFFAOYSA-N
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General description
Silicon carbide (SiC) is a semiconducting material with closed packed stacking of double layers of silicon and carbon. It has excellent thermo-mechanical and electrical properties that make it useful in a variety of electronic and optoelectronic applications.
Application
SiC is majorly used as a base material for applications such as micro-structures, opto-electronic devices (light emitting diodes (LEDs), UV detectors), high temperature electronics (nuclear electronics), and high frequency devices.
Storage Class Code
11 - Combustible Solids
WGK
nwg
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
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Sensors (Basel, Switzerland), 19(23) (2019-11-27)
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Fundamentals of silicon carbide technology: growth, characterization, devices and applications
Fundamentals of silicon carbide technology: growth, characterization, devices and applications (2014)
Properties of silicon carbide (1995)
Optical polarization of nuclear spins in silicon carbide
Falk AL, et al.
Physical Review Letters, 114(24), 247603-247603 (2015)
4H-SiC UV photo detectors with large area and very high specific detectivity
Yan F, et al.
IEEE J. Quant. Elect., 40(9), 1315-1320 (2004)
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