553123
Tetrakis(ethylmethylamido)hafnium(IV)
≥99.99% trace metals basis
Synonym(s):
TEMAH, Tetrakis(ethylmethylamino)hafnium(IV)
About This Item
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Quality Level
Assay
≥99.99% trace metals basis
form
liquid
reaction suitability
core: hafnium
impurities
Purity excludes ~2000 ppm Zirconium
bp
78 °C/0.01 mmHg (lit.)
mp
<-50 °C
density
1.324 g/mL at 25 °C (lit.)
SMILES string
CCN(C)[Hf](N(C)CC)(N(C)CC)N(C)CC
InChI
1S/4C3H8N.Hf/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4
InChI key
NPEOKFBCHNGLJD-UHFFFAOYSA-N
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General description
Application
TEMAH is ideal for ALD because of its low boiling point and its reactivity with water and ozone. Most importantly, its adsorption is self-limiting on a number of substrates including glass, indium-tin oxide(ITO), and Si(100). Researchers have also used it to deposit thin films ofHfO2 on 2D materials, like MoS2.
TEMAH is also useful precursor in the synthesis of ferroelectric hafnium zirconium oxide and Hf1-xZrxO2 thin films on MoS2 phototransistors. Researchers have also deposited thin films of hafnium nitride (Hf3N4) by ALD alternatively pulsing TEMAH and ammonia.
Features and Benefits
- Thermally stable.
- It has sufficient volatility and is suitable for use in vapor deposition.
- Completely self-limiting surface reactions.
accessory
Signal Word
Danger
Hazard Statements
Precautionary Statements
Hazard Classifications
Acute Tox. 4 Oral - Eye Dam. 1 - Flam. Liq. 2 - Skin Corr. 1B - STOT SE 3 - Water-react 1
Target Organs
Respiratory system
Supplementary Hazards
Storage Class Code
4.3 - Hazardous materials which set free flammable gases upon contact with water
WGK
WGK 3
Flash Point(F)
51.8 °F - closed cup
Flash Point(C)
11 °C - closed cup
Personal Protective Equipment
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