901768
Boron nitride suspension
Synonym(s):
2D-BN, 2D-Boron nitride, 2D-Boron nitride dispersion with nonionic surfactant, 2D-hBN, Hexagonal boron nitride
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About This Item
Linear Formula:
BN
UNSPSC Code:
12352302
NACRES:
NA.23
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description
100-2000 nm
thickness < 3 layers
form
liquid
concentration
1 mg/mL in H2O
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General description
Boron nitride suspension (h-BN) (1 mg/mL in water) has a hexagonal bonded structure, with high mechanical strength and good thermal conductivity. It belongs to the class of hexagonal layered materials. It has a direct band gap of 5.8 eV and can be used as a dielectric layer in electronic devices.
Application
2D-hexagonal boron nitride (2D-hBN) is a structural isomorph of graphene and it possesses high chemical, mechanical and thermal stability. However, unlike graphene, the 2D-hBN is a high band gap material. The 2D-hBN exhibits exotic optical and electrical properties and find applications in field effect transistors (FETs), photoelectric devices and UV detectors.
h-BN can be used in the fabrication of photonic devices. It can also be used as a multifunctional additive in a polymeric electrolyte for the formation of lithium metal batteries.
Storage Class Code
12 - Non Combustible Liquids
WGK
WGK 1
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Certificates of Analysis (COA)
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The two-dimensional phase of boron nitride: Few-atomic-layer sheets and suspended membranes.
Pacile D, et al.
Applied Physics Letters, 92(13), 133107-133107 (2008)
Thermal conductivity and phonon transport in suspended few-layer hexagonal boron nitride.
Jo I, et al.
Nano Letters, 13(2), 550-554 (2013)
Two dimensional hexagonal boron nitride (2D-hBN): Synthesis, properties and applications.
Zhang K, et al.
Journal of Material Chemistry C, 5, 11992-11992 (2017)
Hexagonal boron nitride for deep ultraviolet photonic devices.
Jiang HX and Lin JY
Semiconductor Science and Technology, 29(8), 084003-084003 (2014)
Boron nitride substrates for high-quality graphene electronics.
Dean CR, et al.
Nature Nanotechnology, 5(10), 722-722 (2010)
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