추천 제품
설명
Bandgap: 5.97 eV
Raman Peak: 1370 /cm-1
h-BN Coverage: 100% with sporadic adlayers
(Monolayer h-BN)
Quality Level
크기
6 in. (6 in.) × 150 mm (150 mm)
과립 크기
>4 μm
InChI
1S/BN/c1-2
InChI key
PZNSFCLAULLKQX-UHFFFAOYSA-N
유사한 제품을 찾으십니까? 방문 제품 비교 안내
애플리케이션
Monolayer hexagonal boron nitride (h-BN), also known as “white graphene”, is a wide-bandgap 2D crystal (∼ 6 eV that can be tuned to ∼2 eV) with exceptional strength , large oxidation resistance at high temperatures , and optical functionalities . Among its potential applications are:
- Two-dimensional electronics
- Nanophotonic and other optoelectronic devices
- Quantum communication and information science
- Aerospace industry
- MEMS and NEMS
- Micro-/nano- actuators
- Insulating/transparent coatings .
저장 및 안정성
To ensure the maximum shelf life of your hBN sample, it is best stored under vacuum or in inert atmosphere (Argon or Nitrogen) conditions once the vacuum sealed package has been opened.
For all hBN-on-copper products, the displayed range represents electronic data that were obtained after transfer hBN to SiO2. Your own metrics will depend entirely on the transfer methods that you use, and the resultant quality of your transfers.
For all hBN-on-copper products, the displayed range represents electronic data that were obtained after transfer hBN to SiO2. Your own metrics will depend entirely on the transfer methods that you use, and the resultant quality of your transfers.
기질
6″ x 6″ h-BN/copper foil pieces are secured to their underlying plastic containers with four small Kapton tape pieces, one in each corner. Gently peel the tape or cut off the corners of the foil to release the foil from the plastic container.
Storage Class Code
13 - Non Combustible Solids
WGK
WGK 2
Flash Point (°F)
Not applicable
Flash Point (°C)
Not applicable
가장 최신 버전 중 하나를 선택하세요:
From 2-D to 0-D Boron Nitride Materials, The Next Challenge
Stagi L, et al.
Materials, 12(23), 3905-3905 (2019)
Xu-Qian Zheng et al.
Microsystems & nanoengineering, 3, 17038-17038 (2017-07-31)
Atomic layers of hexagonal boron nitride (h-BN) crystal are excellent candidates for structural materials as enabling ultrathin, two-dimensional (2D) nanoelectromechanical systems (NEMS) due to the outstanding mechanical properties and very wide bandgap (5.9 eV) of h-BN. In this work, we report
Kun Ba et al.
Scientific reports, 7, 45584-45584 (2017-04-04)
Monolayer hexagonal boron nitride (h-BN) possesses a wide bandgap of ~6 eV. Trimming down the bandgap is technically attractive, yet poses remarkable challenges in chemistry. One strategy is to topological reform the h-BN's hexagonal structure, which involves defects or grain boundaries
자사의 과학자팀은 생명 과학, 재료 과학, 화학 합성, 크로마토그래피, 분석 및 기타 많은 영역을 포함한 모든 과학 분야에 경험이 있습니다..
고객지원팀으로 연락바랍니다.