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![1,1′-[4,8-Bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl]bis[1,1,1-trimethylstannane]](/deepweb/assets/sigmaaldrich/product/structures/611/912/a638a6fe-ca7b-4674-8023-df4c0921a9fd/640/a638a6fe-ca7b-4674-8023-df4c0921a9fd.png)
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![3,6-Bis(5-bromo-2-thienyl)-2,5-bis(2-hexyldecyl)-2,5-dihydro-pyrrolo[3,4-c]pyrrole-1,4-dione 98%](/deepweb/assets/sigmaaldrich/product/structures/128/499/590a62c1-529b-42e2-96df-25659ec8c9e0/640/590a62c1-529b-42e2-96df-25659ec8c9e0.png)
분석
97%
양식
solid
mp
260-265 °C
SMILES string
O=C1c2ccsc2C(=O)c3ccsc13
InChI
1S/C10H4O2S2/c11-7-5-1-3-13-9(5)8(12)6-2-4-14-10(6)7/h1-4H
InChI key
SIUXRPJYVQQBAF-UHFFFAOYSA-N
일반 설명
Benzo[1,2-b:4,5-b′]dithiophene-4,8-dione (BDTD) is a conductive polymer with a symmetric and planar conjugated structure which has a hole mobility of 0.25 cm2V-1s-1.
애플리케이션
BDTD can be used as an acceptor layer in the fabrication of polymer based solar cells.
Storage Class Code
11 - Combustible Solids
WGK
WGK 3
Flash Point (°F)
Not applicable
Flash Point (°C)
Not applicable
Synthesis and photovoltaic properties of low band gap polymers containing benzo (1, 2-b: 4, 5-c?) dithiophene-4, 8-dione.
Cao J, et al.
Macromolecules, 45(3), 1710-1714 (2012)
Low bandgap polymers with benzo (1, 2-b: 4, 5-b?) dithiophene and bisthiophene-dioxopyrrolothiophene units for photovoltaic applications.
Zhang G, et al.
Polymer, 52(2), 415-421 (2011)
Yongye Liang et al.
Journal of the American Chemical Society, 131(22), 7792-7799 (2009-05-21)
This paper describes synthesis and photovoltaic studies of a series of new semiconducting polymers with alternating thieno[3,4-b]thiophene and benzodithiophene units. The physical properties of these polymers were finely tuned to optimize their photovoltaic effect. The substitution of alkoxy side chains
Optimization of side chains in alkylthiothiophene-substituted benzo (1, 2-b: 4, 5-b?) dithiophene-based photovoltaic polymers.
Zhang S, et al.
Polym. Chem., 6(14), 2752-2760 (2015)
Coffin; R. C.; MacNeill; C. M.; Peterson; E. D.; et al.
Journal of Nanotechnology, 572329-572329 (2011)
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