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87921

Sigma-Aldrich

Tetramethylsilane

≥99.0% (GC)

Synonym(s):

TMS

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About This Item

Linear Formula:
Si(CH3)4
CAS Number:
75-76-3
Molecular Weight:
88.22
Beilstein:
1696908
EC Number:
200-899-1
MDL number:
MFCD00008274
UNSPSC Code:
12352103
PubChem Substance ID:
57653278
NACRES:
NA.22

vapor pressure

11.66 psi ( 20 °C)

Quality Level

100

Assay

≥99.0% (GC)

form

liquid

autoignition temp.

842 °F

refractive index

n20/D 1.358 (lit.)
n20/D 1.359

bp

26-28 °C (lit.)

mp

−99 °C (lit.)

density

0.648 g/mL at 25 °C (lit.)

storage temp.

2-8°C

SMILES string

C[Si](C)(C)C

InChI

1S/C4H12Si/c1-5(2,3)4/h1-4H3

InChI key

CZDYPVPMEAXLPK-UHFFFAOYSA-N

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Application

Tetramethylsilane can be used as a silicon precursor for the synthesis of silicon doped diamond-like carbon (DLC-Si) films and silicon carbide (SiC) bulk crystals. It can also be used as a hydrocarbon substrate to study intermolecular C-H activation chemistry.

Pictograms

Flame
GHS02

Signal Word

Danger

Hazard Statements

H224

Hazard Classifications

Flam. Liq. 1

Storage Class Code

3 - Flammable liquids

WGK

WGK 3

Flash Point(F)

-16.6 °F - closed cup

Flash Point(C)

-27 °C - closed cup

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Regulatory Listings

Regulatory Listings are mainly provided for chemical products. Only limited information can be provided here for non-chemical products. No entry means none of the components are listed. It is the user’s obligation to ensure the safe and legal use of the product.

FSL

Group 4: Flammable liquids
Special flammables
Hazardous rank I

ISHL Indicated Name

Substances Subject to be Indicated Names

ISHL Notified Names

Substances Subject to be Notified Names

JAN Code

87921-VAR:
87921-100ML:
87921-BULK:
87921-25ML:

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Certificates of Analysis (COA)

Lot/Batch Number
STBL0794
STBK8589
STBK5054
STBK3531
STBK1247

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Intermolecular C- H Activation of Hydrocarbons by Tungsten Alkylidene Complexes: An Experimental and Computational Mechanistic Study.
Adams CS, et al.
Organometallics, 20(23), 4939-4955 (2001)
The mechanical and biocompatibility properties of DLC-Si films prepared by pulsed DC plasma activated chemical vapor deposition.
Bendavid A, et al.
Diamond and Related Materials, 16(8), 1616-1622 (2007)
High-temperature chemical vapor deposition for SiC single crystal bulk growth using tetramethylsilane as a precursor.
Nam DH, et al.
Crystal Growth & Design, 14(11), 5569-5574 (2014)
The effects of Si incorporation on the electrochemical and nanomechanical properties of DLC thin films.
Papakonstantinou P, et al.
Diamond and Related Materials, 11(3-6), 1074-1080 (2002)
Roy E Hoffman
Journal of magnetic resonance (San Diego, Calif. : 1997), 163(2), 325-331 (2003-08-14)
The chemical shift of TMS is commonly assumed to be zero. However, it varies by over 1 ppm for 1H and 4 ppm for 13C and shows a correlation with the physical properties of the solvent. Using the commonly accepted
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