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666610

Sigma-Aldrich

Tetrakis(dimethylamido)hafnium(IV)

packaged for use in deposition systems

Synonym(s):

TDMAH, Tetrakis(dimethylamino)hafnium(IV)

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About This Item

Linear Formula:
[(CH3)2N]4Hf
CAS Number:
19782-68-4
Molecular Weight:
354.79
MDL number:
MFCD01862473
UNSPSC Code:
12352103
PubChem Substance ID:
24884811
NACRES:
NA.23

Quality Level

100

Assay

≥99.99% (trace metals analysis)

form

low-melting solid

reaction suitability

core: hafnium

mp

26-29 °C (lit.)

density

1.098 g/mL at 25 °C

SMILES string

CN(C)[Hf](N(C)C)(N(C)C)N(C)C

InChI

1S/4C2H6N.Hf/c4*1-3-2;/h4*1-2H3;/q4*-1;+4

InChI key

ZYLGGWPMIDHSEZ-UHFFFAOYSA-N

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General description

Alkyl amides of Hafnium provide a convenient and effective atomic layer deposition precursor to smooth and and amorphous hafnium oxide thin films.

Application

Precursors Packaged for Depositions Systems
Used as precursor for atomic layer deposition of Hafnium Oxide nanolaminates, which are used as a reploacement for Silicon oxide in semiconductor devices.

Pictograms

FlameCorrosion
GHS02,GHS05

Signal Word

Danger

Hazard Statements

H228,H261,H314

Hazard Classifications

Flam. Sol. 1 - Skin Corr. 1B - Water-react 2

Supplementary Hazards

EUH014

Storage Class Code

4.3 - Hazardous materials which set free flammable gases upon contact with water

WGK

WGK 3

Flash Point(F)

109.4 °F - closed cup

Flash Point(C)

43 °C - closed cup

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Regulatory Listings

Regulatory Listings are mainly provided for chemical products. Only limited information can be provided here for non-chemical products. No entry means none of the components are listed. It is the user’s obligation to ensure the safe and legal use of the product.

FSL

Group 3: Spontaneously combustible substances and water- reactive materials
Materials containing Organometallic compounds
Hazardous rank I
1st spontaneously combustible materials and water reactive materials

ISHL Indicated Name

Substances Subject to be Indicated Names

ISHL Notified Names

Substances Subject to be Notified Names

JAN Code

666610-BULK:
666610-VAR:
666610-25G:4548173354149

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Certificates of Analysis (COA)

Lot/Batch Number
SHBL1439
SHBG7622V
SHBK7010
SHBD9302V
SHBB5637V

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High Purity Metalorganic Precursors for CPV Device Fabrication
Rushworth S
Material Matters, 5(4) null
Surface morphology and crystallinity control in the atomic layer deposition (ALD) of hafnium and zirconium oxide thin films
Hausmann DM, Gordon RG
Journal of Crystal Growth, 249, 251-261 (2003)
Applied Physics Letters, 91, 193503-193503 (2007)
The Savannah ALD System - An Excellent Tool for Atomic Layer Deposition
Monsma D, Becker J
Material Matters, 1(3), 5-5 (2006)

Articles

The Savannah ALD System - An Excellent Tool for Atomic Layer Deposition

igma-Aldrich.com presents an article regarding the savannah ALD system - an excellent tool for atomic layer deposition.

High Purity Metalorganic Precursors for CPV Device Fabrication

High Purity Metalorganic Precursors for CPV Device Fabrication

Nanowire Synthesis: From Top-Down to Bottom-Up

The properties of many devices are limited by the intrinsic properties of the materials that compose them.

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