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Safety Information

403318

Sigma-Aldrich

Indium(III) selenide

Synonym(s):

Indium selenide, Indium sesquiselenide

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About This Item

Linear Formula:
In2Se3
CAS Number:
Molecular Weight:
466.52
EC Number:
MDL number:
UNSPSC Code:
26111700
PubChem Substance ID:
NACRES:
NA.23

form

powder

Quality Level

density

5.67 g/mL at 25 °C (lit.)

SMILES string

[Se]=[In][Se][In]=[Se]

InChI

1S/2In.3Se

InChI key

VSXOUQNLLPQTQK-UHFFFAOYSA-N

General description

Indium selenide (In2Se3) exists in 4 crystal structures (α,β,δ,γ).The metallic α-phase of indium selenide converts to intrinsic conduction β-phase under change in temperature. In2Se3 can be prepared by stoichiometric combination of the elements at 1000 to 1100oC temperatures. Influence of phase transformations on its optical and electrical properties has been reported.

Packaging

Packaged in glass bottles

Signal Word

Danger

Hazard Statements

Hazard Classifications

Acute Tox. 3 Inhalation - Acute Tox. 3 Oral - Aquatic Acute 1 - Aquatic Chronic 1 - STOT RE 2

Storage Class Code

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Regulatory Listings

Regulatory Listings are mainly provided for chemical products. Only limited information can be provided here for non-chemical products. No entry means none of the components are listed. It is the user’s obligation to ensure the safe and legal use of the product.

PDSCL

Poisonous substance

PRTR

Class I Designated Chemical Substances

ISHL Indicated Name

Substances Subject to be Indicated Names

ISHL Notified Names

Substances Subject to be Notified Names

JAN Code

403318-5G:4548173293219
403318-25G:4548173293202
403318-VAR:
403318-BULK:


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Some electrical and optical properties of In2Se3
Bidjin DS, et al.
Physica Status Solidi (A): Applied Research, 6(1), 295-299 (1971)
Growth of single-phase In2Se3 by using metal organic chemical vapor deposition with dual-source precursors.
Chang KJ, et al.
Applied Physics Letters, 89(18), 2118-2118 (2006)

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