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303518

Sigma-Aldrich

Tantalum(V) oxide

99% trace metals basis

Synonym(s):

Tantalum pentoxide

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About This Item

Linear Formula:
Ta2O5
CAS Number:
1314-61-0
Molecular Weight:
441.89
EC Number:
215-238-2
MDL number:
MFCD00011254
UNSPSC Code:
12352303
PubChem Substance ID:
24858127
NACRES:
NA.23

Quality Level

100

Assay

99% trace metals basis

form

powder

reaction suitability

reagent type: catalyst
core: tantalum

density

8.2 g/mL at 25 °C (lit.)

application(s)

battery manufacturing

SMILES string

O=[Ta](=O)O[Ta](=O)=O

InChI

1S/5O.2Ta

InChI key

PBCFLUZVCVVTBY-UHFFFAOYSA-N

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General description

Tantalum pentoxide is dielectric in nature making it useful for making capacitors in the electronics industry.

Application

Tantalum oxide is intermixed with silicon in gate dielectric structures. It may be used to synthesize hexagonally packed mesoporous tantalum oxide molecular sieves.Ion-beam sputter deposition of tantalum oxide films was investigated for possible optical coating applications.It may be used in making optical glass for lenses and in electronic circuits.

Storage Class Code

11 - Combustible Solids

WGK

nwg

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Regulatory Listings

Regulatory Listings are mainly provided for chemical products. Only limited information can be provided here for non-chemical products. No entry means none of the components are listed. It is the user’s obligation to ensure the safe and legal use of the product.

ISHL Indicated Name

Substances Subject to be Indicated Names

ISHL Notified Names

Substances Subject to be Notified Names

JAN Code

303518-100G:4548173936413
303518-BULK:
303518-VAR:
303518-25G:4548173936420

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Certificates of Analysis (COA)

Lot/Batch Number
MKCP0622
MKCN8315
MKCL4098
MKCK7401
MKCK3930

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Synthesis and characterization of hexagonally packed mesoporous tantalum oxide molecular sieves.
Antonelli DM and Ying JY
Chemistry of Materials, 8(4), 874-881 (1996)
Intermixing at the tantalum oxide/silicon interface in gate dielectric structures.
Alers GB, et al.
Applied Physics Letters, 73(11), 1517-1519 (1998)
Effects of oxygen content on the optical properties of tantalum oxide films deposited by ion-beam sputtering.
H Demiryont et al.
Applied optics, 24(4), 490-490 (1985-02-15)

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