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Key Documents

901623

Sigma-Aldrich

Buffered oxide etchant (BOE) 6:1 with surfactant

Synonym(s):

BHF, Buffered HF

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About This Item

UNSPSC Code:
12161700
NACRES:
NA.23

General description

Buffered oxide etchant (BOE) is a wet etchant used in microfabrication. Its primary use is in etching thin films of silicon dioxide (SiO2) or silicon nitride (Si3N4). It is a mixture of a buffering agent, such as ammonium fluoride (NH4F), and hydrofluoric acid (HF). Concentrated HF etches silicon dioxide too quickly for good process control and also peels photoresist used in lithographic patterning.

Application

Buffered oxide etchant (BOE) 6:1 with surfactant may be used in the oxide removal of AlGaN/GaN-based high electron mobility transistors for gate photolithography. It may also be used in a buffer oxide etchant method for the fabrication of micro biochip.

Pictograms

Skull and crossbonesCorrosion
GHS06,GHS05

Signal Word

Danger

Hazard Statements

H300 + H310 + H330,H314

Hazard Classifications

Acute Tox. 1 Dermal - Acute Tox. 2 Inhalation - Acute Tox. 2 Oral - Eye Dam. 1 - Skin Corr. 1A

Storage Class Code

6.1B - Non-combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials

WGK

WGK 2

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

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Certificates of Analysis (COA)

Lot/Batch Number
MKCP1289
MKCL6853
MKCG4610

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Fabrication of a new micro bio chip and flow cell cytometry system using Bio-MEMS technology
Byun I, et al.
Microelectronics Journal, 39(5), 717-722 (2008)
Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by X-ray photoelectron spectroscopy
Gonzalez-Posada F, et al.
Applied Surface Science, 253(14), 6185-6190 (2007)
Effect of passivation on AlGaN/GaN HEMT device performance
2000 IEEE international symposium on compound semiconductors, 357-363 (2000)

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