Skip to Content
Merck
All Photos(3)

Documents

725471

Sigma-Aldrich

Bis(methyl-η5−cyclopentadienyl)methoxymethylzirconium

packaged for use in deposition systems

Synonym(s):

ZRCMMM, ZrD-CO4

Sign Into View Organizational & Contract Pricing
All Photos(3)

About This Item

Linear Formula:
Zr(CH3C5H4)2CH3OCH3
Molecular Weight:
295.53
MDL number:
MFCD16875687
UNSPSC Code:
12352103
PubChem Substance ID:
329764163
NACRES:
NA.23

form

liquid

reaction suitability

core: zirconium

color

colorless

bp

110 °C/0.5 mmHg (lit.)

density

1.27 g/mL±0.01 g/mL at 25 °C (lit.)

SMILES string

C[C]1[C][C][C][C]1.C[C]2[C][C][C][C]2.C[Zr]OC

InChI

1S/2C6H7.CH3O.CH3.Zr/c2*1-6-4-2-3-5-6;1-2;;/h2*2-5H,1H3;1H3;1H3;/q;;-1;;+1

InChI key

LFGIFPGCOXPKMG-UHFFFAOYSA-N

Related Categories

General description

Atomic number of base material: 40 Zirconium

Application

Precursors Packaged for Depositions Systems
Advanced precursor for atomic layer deposition of ZrO2 thin films. Hafnium and zirconium oxides are leading candidates to replace silicion dioxide as the gate oxide in a variety of semiconductor and energy applications. Excellent properties of HfO2 and ZrO2 films make them especially attractive for gate oxide replacement and as potential insulating dielectrics for capacitive elements in memory devices such as DRAM.

Features and Benefits

Compatible with a variety of oxidants in ALD growth processes across a wide temperature range exhibiting self limiting growth up to 400 °C. Precursor volatility and thermal stability properties enable easy materials transport from bubblers into conventional deposition tools.

Packaging

Packaged in stainless steel cylinders compatible with conventional deposition systems. Precursors may be used in liquid injection systems as dilute solutions and in combination with a variety of other sources to deposit mixed oxides.

Pictograms

Exclamation mark
GHS07

Signal Word

Warning

Hazard Statements

H302,H315,H319

Precautionary Statements

P305 + P351 + P338

Hazard Classifications

Acute Tox. 4 Oral - Eye Irrit. 2 - Skin Irrit. 2

Storage Class Code

10 - Combustible liquids not in Storage Class 3

WGK

WGK 3

Flash Point(F)

226.4 °F

Flash Point(C)

108 °C

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

Already Own This Product?

Find documentation for the products that you have recently purchased in the Document Library.

Visit the Document Library

J. W. Elama
Applied Physics Letters, 91, 253123-253123 (2007)
High-k gate dielectrics: current status and material properties considerations
Wilk, G.D.; Wallace, R.M.; Anthony, J.M.
Journal of Applied Physics, 89, 5243-5243 (2001)
Gutsche, M.; Seidl, H.; Luetzen J.; Birner, A.;
International Electron Devices Meeting, 18-18 (2001)

Articles

The Savannah ALD System - An Excellent Tool for Atomic Layer Deposition

igma-Aldrich.com presents an article regarding the savannah ALD system - an excellent tool for atomic layer deposition.

Nanocomposite Coatings with Tunable Properties Prepared by Atomic Layer Deposition

Nanocomposite Coatings with Tunable Properties Prepared by Atomic Layer Deposition

High Purity Metalorganic Precursors for CPV Device Fabrication

High Purity Metalorganic Precursors for CPV Device Fabrication

Nanowire Synthesis: From Top-Down to Bottom-Up

The properties of many devices are limited by the intrinsic properties of the materials that compose them.

See All

Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.

Contact Technical Service