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767603

Sigma-Aldrich

2,7-Diphenyl[1]benzothieno[3,2-b][1]benzothiophene

sublimed grade, 99%

Synonym(s):

2,7-Diphenylbenzo[b]benzo[4,5]thieno[2,3-d]thiophene, DPh-BTBT

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About This Item

Empirical Formula (Hill Notation):
C26H16S2
Molecular Weight:
392.54
UNSPSC Code:
12352103
PubChem Substance ID:
NACRES:
NA.23

grade

sublimed grade

Assay

99%

form

powder or crystals

mp

363-368 °C

semiconductor properties

P-type (mobility=2 cm2/V·s)

SMILES string

c1ccc(cc1)-c2ccc3c(c2)sc4c5ccc(cc5sc34)-c6ccccc6

InChI

1S/C26H16S2/c1-3-7-17(8-4-1)19-11-13-21-23(15-19)27-26-22-14-12-20(16-24(22)28-25(21)26)18-9-5-2-6-10-18/h1-16H

InChI key

SBJIDUSVEICMRY-UHFFFAOYSA-N

Application

2,7-Diphenyl[1]benzothieno(3,2-b)[1]benzothiophene is an organic semiconductor material with high charge mobility. It finds application in the fabrication of organic thin film transistors (OFETs), photovoltaic cells and organic light emitting diodes (OLEDs).
Organic Field Effect Transistor (OFET) Materials; p-Type Organic Semiconductors; p-Type Small Molecules; sublimed grade materials

Legal Information

Product of Nippon Kayaku

Pictograms

Exclamation mark

Signal Word

Warning

Hazard Statements

Hazard Classifications

Acute Tox. 4 Oral - Eye Irrit. 2

Storage Class Code

11 - Combustible Solids

WGK

WGK 3

Flash Point(F)

247.1 °F

Flash Point(C)

119.5 °C


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Kazuo Takimiya et al.
Journal of the American Chemical Society, 128(39), 12604-12605 (2006-09-28)
Vapor-deposited thin films of a newly developed sulfur-containing heteroarene, 2,7-diphenyl[1]benzothieno[3,2-b][1]benzothiophene (DPh-BTBT), were used as an active layer of OFETs, which showed excellent FET characteristics in ambient conditions with mobilities of approximately 2.0 cm2 V-1 s-1 and Ion/Ioff of 107.
Takimiya, Kazuo; et al.
Science and Technology of Advanced Materials, 8, 273-276 (2007)
Alkylated Dinaphtho (2, 3-b: 2′ , 3′ -f) Thieno (3, 2-b) Thiophenes (Cn-DNTTs): Organic Semiconductors for High-Performance Thin-Film Transistors.
Kang MJ, et al.
Advanced Materials, 23(10), 1222-1225 (2011)

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