Skip to Content
Merck
All Photos(1)

Key Documents

More Documents

87921

Sigma-Aldrich

Tetramethylsilane

≥99.0% (GC)

Synonym(s):

TMS

Sign Into View Organizational & Contract Pricing
All Photos(1)

About This Item

Linear Formula:
Si(CH3)4
CAS Number:
75-76-3
Molecular Weight:
88.22
Beilstein:
1696908
EC Number:
200-899-1
MDL number:
MFCD00008274
UNSPSC Code:
12352103
PubChem Substance ID:
57653278
NACRES:
NA.22

vapor pressure

11.66 psi ( 20 °C)

Assay

≥99.0% (GC)

form

liquid

autoignition temp.

842 °F

refractive index

n20/D 1.358 (lit.)
n20/D 1.359

bp

26-28 °C (lit.)

mp

−99 °C (lit.)

density

0.648 g/mL at 25 °C (lit.)

storage temp.

2-8°C

SMILES string

C[Si](C)(C)C

InChI

1S/C4H12Si/c1-5(2,3)4/h1-4H3

InChI key

CZDYPVPMEAXLPK-UHFFFAOYSA-N

Looking for similar products? Visit Product Comparison Guide

Related Categories

Application

Tetramethylsilane can be used as a silicon precursor for the synthesis of silicon doped diamond-like carbon (DLC-Si) films and silicon carbide (SiC) bulk crystals. It can also be used as a hydrocarbon substrate to study intermolecular C-H activation chemistry.

Pictograms

Flame
GHS02

Signal Word

Danger

Hazard Statements

H224

Precautionary Statements

P210

Hazard Classifications

Flam. Liq. 1

Storage Class Code

3 - Flammable liquids

WGK

WGK 3

Flash Point(F)

-16.6 °F - closed cup

Flash Point(C)

-27 °C - closed cup

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

Already Own This Product?

Find documentation for the products that you have recently purchased in the Document Library.

Visit the Document Library

Intermolecular C- H Activation of Hydrocarbons by Tungsten Alkylidene Complexes: An Experimental and Computational Mechanistic Study.
Adams CS, et al.
Organometallics, 20(23), 4939-4955 (2001)
The mechanical and biocompatibility properties of DLC-Si films prepared by pulsed DC plasma activated chemical vapor deposition.
Bendavid A, et al.
Diamond and Related Materials, 16(8), 1616-1622 (2007)
High-temperature chemical vapor deposition for SiC single crystal bulk growth using tetramethylsilane as a precursor.
Nam DH, et al.
Crystal Growth & Design, 14(11), 5569-5574 (2014)
The effects of Si incorporation on the electrochemical and nanomechanical properties of DLC thin films.
Papakonstantinou P, et al.
Diamond and Related Materials, 11(3-6), 1074-1080 (2002)
Roy E Hoffman
Journal of magnetic resonance (San Diego, Calif. : 1997), 163(2), 325-331 (2003-08-14)
The chemical shift of TMS is commonly assumed to be zero. However, it varies by over 1 ppm for 1H and 4 ppm for 13C and shows a correlation with the physical properties of the solvent. Using the commonly accepted
View All Related Papers

Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.

Contact Technical Service