767492
Silicon
sputtering target, diam. × thickness 2.00 in. × 0.25 in., 99.999% trace metals basis
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About This Item
Assay
99.999% trace metals basis
form
solid
reaction suitability
core: silicon
diam. × thickness
2.00 in. × 0.25 in.
bp
2355 °C (lit.)
mp
1410 °C (lit.)
density
2.33 g/mL at 25 °C (lit.)
SMILES string
[Si]
InChI
1S/Si
InChI key
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
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Application
Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. The extreme miniaturization of components in the semiconductor and electronics industry requires high purity sputtering targets for thin film deposition
Storage Class Code
13 - Non Combustible Solids
WGK
WGK 3
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
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