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Sigma-Aldrich

Bismuth(III) telluride

greener alternative

powder, −325 mesh, 99.99% trace metals basis

Synonym(s):

Bismuth sesquitelluride, Bismuth telluride, Dibismuth tritelluride

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About This Item

Linear Formula:
Bi2Te3
CAS Number:
Molecular Weight:
800.76
EC Number:
MDL number:
UNSPSC Code:
12352300
PubChem Substance ID:
NACRES:
NA.23

Assay

99.99% trace metals basis

form

powder

greener alternative product characteristics

Design for Energy Efficiency
Learn more about the Principles of Green Chemistry.

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particle size

−325 mesh

mp

573 °C
585 °C (lit.)

density

7.642 g/mL at 25 °C (lit.)

greener alternative category

SMILES string

[Te]=[Bi][Te][Bi]=[Te]

InChI

1S/2Bi.3Te

InChI key

GUYIRKJSQUOSJV-UHFFFAOYSA-N

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General description

Bismuth(III) telluride (Bi2Te3) is a thermoelectric material, which acts as a topological insulator: a quantum material with an insulating bulky gap and gapless edge. It forms thin films by different techniques, which include chemical method, electrodeposition and molecular jet method.
The binary chalcogenide, bismuth(III) telluride occurs as mineral tellurobismuthite in nature. 1-2
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Application

Bi2Te3 can be used for a saturable absorber in a variety of photo-optic applications, which include pulse fiber lasers.

Pictograms

Exclamation mark

Signal Word

Warning

Hazard Classifications

Acute Tox. 4 Dermal - Acute Tox. 4 Inhalation - Acute Tox. 4 Oral - Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3

Target Organs

Respiratory system

Storage Class Code

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable


Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Organic-inorganic nanohybrids as novel thermoelectric materials: hybrids of polyaniline and bismuth (III) telluride nanoparticles
Toshima N, et al.
Journal of Electronic Materials, 40(5), 898-902 (2011)

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