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  • The Assembling of Poly (3-Octyl-Thiophene) on CVD Grown Single Layer Graphene.

The Assembling of Poly (3-Octyl-Thiophene) on CVD Grown Single Layer Graphene.

Scientific reports (2015-12-05)
Yanqiu Jiang, Ling Yang, Zongxia Guo, Shengbin Lei
摘要

The interface between organic semiconductor and graphene electrode, especially the structure of the first few molecular layers at the interface, is crucial for the device properties such as the charge transport in organic field effect transistors. In this work, we have used scanning tunneling microscopy to investigate the poly (3-octyl-thiophene) (P3OT)-graphene interface. Our results reveal the dynamic assembling of P3OT on single layer graphene. As on other substrates the epitaxial effect plays a role in determining the orientation of the P3OT assembling, however, the inter-thiophene distance along the backbone is consistent with that optimized in vaccum, no compression was observed. Adsorption of P3OT on ripples is weaker due to local curvature, which has been verified both by scanning tunneling microscopy and density functional theory simulation. Scanning tunneling microscopy also reveals that P3OT tends to form hairpin folds when meets a ripple.

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1-苯基辛烷, 98%