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216011

Sigma-Aldrich

Ammonium fluoride

ACS reagent, ≥98.0%

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About This Item

Linear Formula:
NH4F
CAS Number:
12125-01-8
Molecular Weight:
37.04
EC Number:
235-185-9
MDL number:
MFCD00011423
UNSPSC Code:
12352300
eCl@ss:
38050106
PubChem Substance ID:
329752182
NACRES:
NA.21

grade

ACS reagent

Assay

≥98.0%

form

crystals, granules or chunks

impurities

≤0.005% insolubles

ign. residue

≤0.01%

pH

~6 (20 °C)

anion traces

chloride (Cl-): ≤0.001%
sulfate (SO42-): ≤0.005%

cation traces

Fe: ≤5 ppm
heavy metals (as Pb): ≤5 ppm

SMILES string

N.F

InChI

1S/FH.H3N/h1H;1H3

InChI key

LDDQLRUQCUTJBB-UHFFFAOYSA-N

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Application

Employed in a new hydrothermal synthesis of complex flourides NaHoF4 and NaEuF4 these interesting compounds have the fluorite structure and are important for solid-state lasers as well as for photoluminescence and magnetic characteristics.

Pictograms

Skull and crossbones
GHS06

Signal Word

Danger

Hazard Statements

H301 + H311 + H331

Hazard Classifications

Acute Tox. 3 Dermal - Acute Tox. 3 Inhalation - Acute Tox. 3 Oral

Storage Class Code

6.1D - Non-combustible acute toxic Cat.3 / toxic hazardous materials or hazardous materials causing chronic effects

WGK

WGK 1

Flash Point(F)

does not flash

Flash Point(C)

does not flash

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Sigma-Aldrich

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Self-organized TiO2 nanotubes prepared in ammonium fluoride containing acetic acid electrolytes.
Tsuchiya H, et al.
Electrochemical Communications, 7(6), 576-580 (2005)
Phase transition in ammonium fluoride.
Stevenson R.
J. Chem. Phys. , 34(1), 346-347 (1961)
On the Etching of Silicon by Oxidants in Ammonium Fluoride Solutions A Mechanistic Study.
Gerischer H and Lubke M.
Journal of the Electrochemical Society, 135(11), 2782-2786 (1988)
Surface analysis of the electropolishing layer on Si (111) in ammonium fluoride solution.
Lewerenz HJ, et al.
Electrochimica Acta, 45(28), 4615-4627 (2000)
Jae Hoon Bong et al.
Nanoscale, 6(15), 8503-8508 (2014-06-21)
We report a post-synthetic n-doping method for chemical-vapor-deposition (CVD) grown graphene using wet chemical processing. An ammonium fluoride solution was found effective in converting pristine hole doping into electron doping in addition to the mobility improvement of charge carriers. We
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