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703214

Sigma-Aldrich

Di-tetrabutylammonium cis-bis(isothiocyanato)bis(2,2′-bipyridyl-4,4′-dicarboxylato)ruthenium(II)

95% (NMR)

Synonyme(s) :

Greatcell Solar®, N-719 dye

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About This Item

Formule empirique (notation de Hill):
C58H86N8O8RuS2
Numéro CAS:
207347-46-4
Poids moléculaire :
1188.55
Numéro MDL:
MFCD11042475
Code UNSPSC :
12352103
ID de substance PubChem :
329762439
Nomenclature NACRES :
NA.23

Pureté

95% (NMR)

Forme

powder

Composition

Dye content, ≥90% HPLC

Pf

250-260 °C

λmax

534, 393, 313 nm (lit.)

Chaîne SMILES 

S=C=N[Ru]N=C=S.CCCC[N+](CCCC)(CCCC)CCCC.CCCC[N+](CCCC)(CCCC)CCCC.OC(=O)c1ccnc(c1)-c2cc(ccn2)C([O-])=O.OC(=O)c3ccnc(c3)-c4cc(ccn4)C([O-])=O

InChI

1S/2C16H36N.2C12H8N2O4.2CNS.Ru/c2*1-5-9-13-17(14-10-6-2,15-11-7-3)16-12-8-4;2*15-11(16)7-1-3-13-9(5-7)10-6-8(12(17)18)2-4-14-10;2*2-1-3;/h2*5-16H2,1-4H3;2*1-6H,(H,15,16)(H,17,18);;;/q2*+1;;;2*-1;+2/p-2

Clé InChI

MQGCPZMVNHGIPF-UHFFFAOYSA-L

Description générale

Di-tetrabutylammonium cis-bis(isothiocyanato)bis(2,2′-bipyridyl-4,4′-dicarboxylato)ruthenium(II) (N-719 dye) is a ruthenium based polypyridyl mixture used as a photosensitizer. It acts as a medium for effective absorption of photons and transfer of electrons within the electrolytic solar cells.

Application

N-719 dye is widely used as a sensitizer that can be coated on indium tin oxide (ITO) substrates by doctor blade technique, with different photoanode materials like titanium oxide (TiO2), zinc oxide (ZnO), and gold nanourchin for dye sensitized solar cell (DSSC) applications.

Informations légales

Product of Greatcell Solar Materials Pty Ltd.
Greatcell Solar is a registered trademark of Greatcell Solar Materials Pty Ltd.
Greatcell Solar is a registered trademark of Greatcell Solar

Pictogrammes

Health hazard
GHS08

Mention d'avertissement

Danger

Mentions de danger

H334

Conseils de prudence

P261 - P342 + P311

Classification des risques

Resp. Sens. 1

Code de la classe de stockage

11 - Combustible Solids

Classe de danger pour l'eau (WGK)

WGK 3

Point d'éclair (°F)

Not applicable

Point d'éclair (°C)

Not applicable

Équipement de protection individuelle

dust mask type N95 (US), Eyeshields, Faceshields, Gloves

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Certificats d'analyse (COA)

Lot/Batch Number
MKCP5489
MKCL7514
MKCJ9849
MKCF5489
MKBZ5620V

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Retrouvez la documentation relative aux produits que vous avez récemment achetés dans la Bibliothèque de documents.

Consulter la Bibliothèque de documents

Au nanoparticle-decorated urchin-like TiO2 hierarchical microspheres for high performance dye-sensitized solar cells
Li Y, et al.
Electrochimica Acta, 293(2), 230-239 (2019)
Ruthenium sensitizers and their applications in dye-sensitized solar cells
Hara K and Koumura N
International Journal of Photoenergy (2012)
Enhancing near-infrared solar cell response using upconverting transparentceramics
Liu M, et al.
Solar Energy Materials and Solar Cells, 95(2), 800-803 (2011)
Low temperature sintering of aqueous TiO2 colloids for flexible, co-sensitized dye-sensitized solar cells
Holliman PJ, et al.
Materials Letters, 236(2), 289-291 (2019)
Fabrication of thin film dye sensitized solar cells with solar to electric power conversion efficiency over 10%.
Ito S, et al.
Thin Solid Films, 516(14), 4613-4619 (2008)

Articles

Ruthenium-Based Dyes for Dye Solar Cells

Ruthenium-Based Dyes for Dye Solar Cells

Efficient Dye-sensitized Solar Cells for Direct Conversion of Sunlight to Electricity

Dye-sensitized solar cells directly convert sunlight to electricity

Organic Dyes for Efficient and Stable Dye-Sensitized Solar Cells

Over the last decade, dye-sensitized solar cells (DSSCs) have attracted much attention because these unconventional solar cells exhibit high performance and have the potential for low-cost production.

Synthesis of ZnO Aggregates and Their Application in Dye-Sensitized Solar Cells

One of the more traditional photovoltaic devices, single crystalline silicon solar cells were invented more than 50 years ago, currently make up 94% of the market. Single crystalline silicon solar cells operate on the principle of p-n junctions formed by joining p-type and n-type semiconductors.

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