366870
Indium(III) phosphide
pieces, 3-20 mesh, 99.998% trace metals basis
Synonyme(s) :
Indium monophosphide, Indium phosphide
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About This Item
Produits recommandés
Niveau de qualité
Pureté
99.998% trace metals basis
Forme
pieces
Pertinence de la réaction
reagent type: catalyst
core: indium
Taille des particules
3-20 mesh
Chaîne SMILES
P#[In]
InChI
1S/In.P
Clé InChI
GPXJNWSHGFTCBW-UHFFFAOYSA-N
Mention d'avertissement
Danger
Mentions de danger
Conseils de prudence
Classification des risques
Carc. 1B - Repr. 2 - STOT RE 1
Code de la classe de stockage
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
Classe de danger pour l'eau (WGK)
WGK 3
Point d'éclair (°F)
Not applicable
Point d'éclair (°C)
Not applicable
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Biosensors & bioelectronics, 36(1), 62-68 (2012-04-28)
The development of highly-sensitive and label-free operating semiconductor-based, biomaterial detecting sensors has important applications in areas such as environmental science, biomedical research and medical diagnostics. In the present study, we developed an Indium Phosphide (InP) semiconductor-based resistive biosensor using the
Applied spectroscopy, 66(8), 944-950 (2012-07-18)
We present a new compact system for time-domain diffuse optical spectroscopy of highly scattering media operating in the wavelength range from 1100 nm to 1700 nm. So far, this technique has been exploited mostly up to 1100 nm: we extended
Nanotechnology, 23(27), 275103-275103 (2012-06-20)
Direct comparisons of different types of nanoparticles for drug delivery have seldom been performed. In this study we compare the physical properties and cellular activity of doxorubicin (Dox) conjugates to gold nanoparticles (Au) and InP quantum dots of comparable diameter.
Nano letters, 12(6), 2888-2893 (2012-05-19)
We investigated the Au-assisted growth of alternating InAsP/InP heterostructures in wurtzite InP nanowires on InP(111)B substrates for constructing multiple-quantum-dot structures. Vertical InP nanowires without stacking faults were obtained at a high PH(3)/TMIn mole flow ratio of 300-1000. We found that
Optics express, 20(27), 28734-28741 (2012-12-25)
A strictly non-blocking 8 × 8 switch for high-speed WDM optical interconnection is realized on InP by using the phased-array scheme for the first time. The matrix switch architecture consists of over 200 functional devices such as star couplers, phase-shifters
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