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920924

Sigma-Aldrich

Monolayer hexagonal Boron Nitride (hBN) on Si/SiO2 wafer

diam. 200 mm (8 in.)

Synonym(s):

Boronitrene, Hexagonal boron nitride monolayer, Single-layer hexagonal boron nitride, White graphene

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About This Item

Empirical Formula (Hill Notation):
BN
CAS Number:
10043-11-5
Molecular Weight:
24.82
MDL number:
MFCD00008279

description

Bandgap: 5.97 eV
Metal Impurities: 1.00e10 – 5.00e10 (at/cm2)
Monolayer h-BN
Orientation: <1-0-0>
Raman Peak: 1370 /cm-1
Substrate Type/Doping: P/B
hBN Coverage: 100% with sporadic adlayers

Quality Level

100

resistivity

5-30 Ω-cm

diam.

200 mm (8 in.)

thickness

300 nm , Oxide
725 ± 25 μm , Wafer

grain size

>4 μm

InChI

1S/BN/c1-2

InChI key

PZNSFCLAULLKQX-UHFFFAOYSA-N

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Application

Monolayer hexagonal boron nitride (h-BN), also known as “white graphene”, is a wide-bandgap 2D crystal (~6 eV that can be tuned to ~2 eV) with exceptional strength , large oxidation resistance at high temperatures , and optical functionalities . Among its potential applications are:
  • Two-dimensional electronics
  • Nanophotonic and other optoelectronic devices
  • Quantum communication and information science
  • Aerospace industry
  • MEMS and NEMS
  • Micro-/nano- actuators
  • nsulating/transparent coatings

Storage and Stability

To ensure the maximum shelf life of your hBN sample, it is best stored under vacuum or in inert atmosphere (Argon or Nitrogen) conditions once the vacuum sealed package has been opened.

Storage Class Code

13 - Non Combustible Solids

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Chemical and Bandgap Engineering in Monolayer Hexagonal Boron Nitride
Ba K, et al.
Scientific Reports, 7 (2017)
From 2-D to 0-D Boron Nitride Materials, The Next Challenge
Stagi L, et al.
Materials, 12(23) (2019)
Piezoelectricity in Monolayer Hexagonal Boron Nitride
Ares P, et al.
Advanced Materials, 32 (2020)

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