920126
R2R Monolayer large grain CVD graphene on silicon wafer
4 in diameter, avg. no. of layers, 1
Synonym(s):
Roll-to-Roll graphene
About This Item
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Quality Level
description
Growth method: roll-to-roll CVD
Wafer: SiO2 (300nm) Si
Number of layer: Monolayer
Raman intensity 2D/G: ≥1.5
feature
avg. no. of layers 1
sheet resistance
280 Ω/sq ±10%
size
110 μm × 110 μm ± 10% , grain size
surface coverage
surface coverage >98%
transmittance
>97%
semiconductor properties
(mobility>3000 cm2/V·s) (Hall effect measurements)
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General description
Application
The roll-to-roll process allows continuous, large scale graphene production.
This large grain size graphene product on silicon wafer is ready to use, helps you minimize process time, and increase success rate. This product with low sheet resistance would enable unmatched reproducibility and allow high performance for CVD graphene based FET, CVD graphene based sensors, and heterostructure based micro/nano electronics.
Application examples:
- Ultrafast Transistor
- Optical devices
- Bio/Gas Sensor
- Transparent Electrode
- Flexible Display
- Smart Coating
- Thermal management
Caution
Keep away from contamination, heat, dust and flame etc.
Storage and Stability
Legal Information
Storage Class Code
11 - Combustible Solids
WGK
WGK 3
Certificates of Analysis (COA)
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