Saltar al contenido
Merck
Todas las fotos(1)

Documentos

647535

Sigma-Aldrich

Silicon

wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

Sinónimos:

Silicon element

Iniciar sesiónpara Ver la Fijación de precios por contrato y de la organización
Todas las fotos(1)

About This Item

Fórmula lineal:
Si
Número de CAS:
7440-21-3
Peso molecular:
28.09
Número CE:
231-130-8
Número MDL:
MFCD00085311
Código UNSPSC:
12352300
ID de la sustancia en PubChem:
24883543
NACRES:
NA.23

formulario

crystalline (cubic (a = 5.4037))
wafer (single side polished)

Nivel de calidad

100

no contiene

dopant

diám. × grosor

3 in. × 0.5 mm

bp

2355 °C (lit.)

mp

1410 °C (lit.)

densidad

2.33 g/mL at 25 °C (lit.)

propiedades de los semiconductores

<100>, N-type

cadena SMILES

[Si]

InChI

1S/Si

Clave InChI

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

¿Está buscando productos similares? Visita Guía de comparación de productos

Categorías relacionadas

Aplicación

Silicon wafers are majorly used in electronics as substrate materials. They are also used in a variety of applications like solar cells, microelectronics, and other integrated circuits.

Propiedades físicas

0 vortex defects. Etch pitch density (EPD) <100 cm-2. Resistivity 1,000- 2,300 Ωcm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″

Código de clase de almacenamiento

13 - Non Combustible Solids

Clase de riesgo para el agua (WGK)

WGK 3

Punto de inflamabilidad (°F)

Not applicable

Punto de inflamabilidad (°C)

Not applicable

Equipo de protección personal

Eyeshields, Gloves, type N95 (US)

Certificados de análisis (COA)

Busque Certificados de análisis (COA) introduciendo el número de lote del producto. Los números de lote se encuentran en la etiqueta del producto después de las palabras «Lot» o «Batch»

¿Ya tiene este producto?

Encuentre la documentación para los productos que ha comprado recientemente en la Biblioteca de documentos.

Visite la Librería de documentos

Los clientes también vieron

Slide 1 of 5

1 of 5

Silicon wafer, &#60;111&#62;, P-type, contains boron as dopant, diam. × thickness 2&#160;in. × 0.3&#160;mm

Sigma-Aldrich

647705

Silicon

Silicon pieces, 99.95% trace metals basis

Sigma-Aldrich

343250

Silicon

Silicon dioxide single crystal substrate, optical grade, 99.99% trace metals basis, L × W × thickness 10&#160;mm × 10&#160;mm × 0.5&#160;mm

Sigma-Aldrich

634867

Silicon dioxide

Nickel sputtering target, diam. × thickness 2.00&#160;in. × 0.25&#160;in., 99.95% trace metals basis

Sigma-Aldrich

767484

Nickel

Gold coated glass slide layer thickness 100&#160;Å, 99.999% (Au)

Sigma-Aldrich

643203

Gold coated glass slide

24.7% record efficiency HIT solar cell on thin silicon wafer
Taguchi M, et al.
IEEE journal of Photovoltaics, 4(1), 96-99 (2013)
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
Mariya Nazish Memon et al.
JPMA. The Journal of the Pakistan Medical Association, 62(12), 1329-1332 (2013-07-23)
To evaluate the outcome of nasolacrimal intubation as a primary treatment of congenital nasolacrimal duct obstruction (NLDO) in children up to 4 years of age. During the 3 years period from July 2008 to June 2011, in the Paediatric Ophthalmology
Ver todos los artículos relacionados

Artículos

Molecular Monolayers on Silicon Surfaces

This article briefly reviews the methods and mechanisms for the formation of molecular monolayers on silicon surfaces, the properties of these monolayers and current perspectives regarding their application in molecular electronic and sensing applications.

Dye-Sensitized and Perovskite Solar Cells: Interface Engineering by Atomic Layer Deposition

Dye-Sensitized and Perovskite Solar Cells: Interface Engineering by Atomic Layer Deposition

FePt Nanogranular films for high density heat-assisted magnetic recording

A hard disk drive (HDD) is a data storage device that stores digital information by magnetizing nanosized magnets on flat disks and retrieves data by sensing the resulting magnetic field.

Building and Engineering Micro/Nano Architectures of Single-Walled Carbon Nanotubes for Electronic Applications

Building and Engineering Micro/Nano Architectures of Single-Walled Carbon Nanotubes for Electronic Applications

Ver todo

Protocolos

Negative Photoresist Procedure

Negative Photoresist Procedure

Nuestro equipo de científicos tiene experiencia en todas las áreas de investigación: Ciencias de la vida, Ciencia de los materiales, Síntesis química, Cromatografía, Analítica y muchas otras.

Póngase en contacto con el Servicio técnico