646687

Silicon

wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

• Synonym(s): Silicon element
• Linear Formula: Si
• CAS Number: 7440-21-3
• Molecular Weight: 28.09
• EC Number: 231-130-8
• MDL number: MFCD00085311
• UNSPSC Code: 12352300
• PubChem Substance ID: 24883476
• NACRES: NA.23

Properties

• form: crystalline (cubic (a = 5.4037)); wafer (single side polished)
• Quality Level: 100
• does not contain: dopant
• diam. × thickness: 2 in. × 0.5 mm
• bp: 2355 °C (lit.)
• mp: 1410 °C (lit.)
• density: 2.33 g/mL at 25 °C (lit.)
• semiconductor properties: <100>, N-type
• SMILES string: [Si]
• InChI: 1S/Si
• InChI key: XUIMIQQOPSSXEZ-UHFFFAOYSA-N

Description

General description

Silicon wafers or a “slice” of substrate find applications in the fabrication of integrated circuits, solar cells etc. They serve as a substrate for various microelectronic devices.

Application

• Innovative Solutions for High-Performance Silicon Anodes in Lithium-Ion Batteries: Overcoming Challenges and Real-World Applications.: This article addresses the challenges and real-world applications of high-performance silicon anodes in lithium-ion batteries, presenting innovative solutions to enhance their efficiency (Khan et al., 2024).
• Strain Engineering: Perfecting Freestanding Perovskite Oxide Fabrication.: This research focuses on strain engineering to improve the fabrication of freestanding perovskite oxides, which are crucial for various high-purity silicon applications in academia (Yun et al., 2024).

Physical properties

0 vortex defects. Etch pitch density (EPD) < 100 (cm^-2). Resistivity 100 - 3000 Ωcm

Oxygen content: ≤ 1~1.8 x 10¹⁸ /cm³; Carbon content: ≤ 5 x 10¹⁶ /cm³; Boule diameter: 1~8 ″

Safety Information

• Storage Class Code: 13 - Non Combustible Solids
• WGK: WGK 3
• Flash Point(F): Not applicable
• Flash Point(C): Not applicable
• Personal Protective Equipment: dust mask type N95 (US), Eyeshields, Gloves