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P1802

Sigma-Aldrich

Pentacene

99%

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About This Item

Empirical Formula (Hill Notation):
C22H14
CAS Number:
Molecular Weight:
278.35
Beilstein:
1912418
EC Number:
MDL number:
UNSPSC Code:
12352103
PubChem Substance ID:
NACRES:
NA.23

Assay

99%

form

powder

mp

372-374 °C (subl.)

solubility

organic solvents: slightly soluble

Orbital energy

HOMO 5 eV 
LUMO 3 eV 

OPV Device Performance

ITO/pentacene/C60/BCP/Al

  • Short-circuit current density (Jsc): 15 mA/cm2
  • Open-circuit voltage (Voc): 0.36 V
  • Fill Factor (FF): 0.5
  • Power Conversion Efficiency (PCE): 2.7 %

semiconductor properties

P-type (mobility=0.4-3 cm2/V·s) (on/off ratio=1E5-1E8)

SMILES string

c1ccc2cc3cc4cc5ccccc5cc4cc3cc2c1

InChI

1S/C22H14/c1-2-6-16-10-20-14-22-12-18-8-4-3-7-17(18)11-21(22)13-19(20)9-15(16)5-1/h1-14H

InChI key

SLIUAWYAILUBJU-UHFFFAOYSA-N

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General description

Pentacene belongs to the class of fused polycyclic hydrocarbons that are a part of the acene family with five rings. It is majorly utilized in electronic applications due to its high hole mobility of 1200 cm2V−1s−1 and fluorescent absorption peak at the wavelength of 578 nm.
Pentacene is a popular organic semi conductor. Upon deposition on any insulating substrate, the molecules organize to form polycrystalline films. The pentacene films show good transport properties. The hydrogen atoms which surround the carbon backbone are less electronegative than the carbon backbone itself and lend some electron density to the delocalized pi-electron cloud. It can also form large crystals.

Application

Pentacene can be functionalized by treating it with poly(4-vinyl phenol) (PVP), which can be used to reduce the surface energy of organic thin film transistors (OTFTs) and increase the hole mobility by 109%. It is mainly used in the fabrication of field effect transistors, which can be doped with iodine to increase the threshold voltage up to 140 V.

Packaging

Bottomless glass bottle. Contents are inside inserted fused cone.

Storage Class Code

11 - Combustible Solids

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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Customers Also Viewed

Bias stress instability in pentacene thin film transistors: Contact resistance change and channel threshold voltage shift.
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This paper introduces a strategy to modulate a Schottky barrier formed at a graphene-semiconductor heterojunction. The modulation is performed by controlling the work function of graphene from a gate that is placed laterally away from the graphene-semiconductor junction, which we
Pentacene thin-film transistors with polymeric gate dielectric.
Puigdollars J, et al.
Organic Electronics, 5(1), 67-71 (2004)
Iodine doping enabled wide range threshold voltage modulation in pentacene transistors
Wang YW, et al.
Thin Solid Films, 669(3), 29-33 (2019)
Control of open-circuit voltage in organic photovoltaic cells by inserting an ultrathin metal-phthalocyanine layer
Kinoshita, Y.; Hasobe, T.; Murata, H.
Applied Physics Letters, 91, 083518-083518 (2007)

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Dr. Chan and researchers highlight flexible transistors are the building blocks of next-generation soft electronics. Among all the reported material systems that can be fabricated by researchers, such as circuits, biosensors, stretchable displays, and others,1–5 small molecular weight organic semiconductors are among the most promising candidates for flexible transistor applications. For these small molecular weight organic semiconductors, the semiconductor forming the conductive channel dominates the device performance.

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There is widespread demand for thin, lightweight, and flexible electronic devices such as displays, sensors, actuators, and radio-frequency identification tags (RFIDs). Flexibility is necessary for scalability, portability, and mechanical robustness.

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