646687

Silizium

wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

• Synonym(e): Silicon element
• Lineare Formel: Si
• CAS-Nummer: 7440-21-3
• Molekulargewicht: 28.09
• EG-Nummer: 231-130-8
• MDL-Nummer: MFCD00085311
• UNSPSC-Code: 12352300
• PubChem Substanz-ID: 24883476
• NACRES: NA.23

Eigenschaften

• Form: crystalline (cubic (a = 5.4037)); wafer (single side polished)
• Qualitätsniveau: 100
• Enthält nicht: dopant
• Durchm. × Dicke: 2 in. × 0.5 mm
• bp: 2355 °C (lit.)
• mp (Schmelzpunkt): 1410 °C (lit.)
• Dichte: 2.33 g/mL at 25 °C (lit.)
• Halbleitereigenschaften: <100>, N-type
• SMILES String: [Si]
• InChI: 1S/Si
• InChIKey: XUIMIQQOPSSXEZ-UHFFFAOYSA-N

Beschreibung

Allgemeine Beschreibung

Silicon wafers or a “slice” of substrate find applications in the fabrication of integrated circuits, solar cells etc. They serve as a substrate for various microelectronic devices.

Anwendung

• Innovative Solutions for High-Performance Silicon Anodes in Lithium-Ion Batteries: Overcoming Challenges and Real-World Applications.: This article addresses the challenges and real-world applications of high-performance silicon anodes in lithium-ion batteries, presenting innovative solutions to enhance their efficiency (Khan et al., 2024).
• Strain Engineering: Perfecting Freestanding Perovskite Oxide Fabrication.: This research focuses on strain engineering to improve the fabrication of freestanding perovskite oxides, which are crucial for various high-purity silicon applications in academia (Yun et al., 2024).

Physikalische Eigenschaften

0 vortex defects. Etch pitch density (EPD) < 100 (cm^-2). Resistivity 100 - 3000 Ωcm

Oxygen content: ≤ 1~1.8 x 10¹⁸ /cm³; Carbon content: ≤ 5 x 10¹⁶ /cm³; Boule diameter: 1~8 ″

Sicherheitshinweise

• Lagerklassenschlüssel: 13 - Non Combustible Solids
• WGK: WGK 3
• Flammpunkt (°F): Not applicable
• Flammpunkt (°C): Not applicable
• Persönliche Schutzausrüstung: Eyeshields, Gloves, type N95 (US)