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Merck

393541

Sigma-Aldrich

Gallium(III)-acetylacetonat

99.99% trace metals basis

Synonym(e):

Ga(acac)3, Gallium(III)-2,4-pentandionat

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About This Item

Lineare Formel:
[CH3COCH=C(O-)CH3]3Ga
CAS-Nummer:
Molekulargewicht:
367.05
EG-Nummer:
MDL-Nummer:
UNSPSC-Code:
12352103
PubChem Substanz-ID:
NACRES:
NA.23

Qualitätsniveau

Assay

99.99% trace metals basis

Form

solid

Eignung der Reaktion

core: gallium
reagent type: catalyst

mp (Schmelzpunkt)

196-198 °C (dec.) (lit.)

SMILES String

CC(=O)\C=C(\C)O[Ga](O\C(C)=C/C(C)=O)O\C(C)=C/C(C)=O

InChI

1S/3C5H8O2.Ga/c3*1-4(6)3-5(2)7;/h3*3,6H,1-2H3;/q;;;+3/p-3/b3*4-3-;

InChIKey

ZVYYAYJIGYODSD-LNTINUHCSA-K

Allgemeine Beschreibung

Gallium(III) acetylacetonate is a sol-gel precursor used to synthesize high-purity GaN nano-wires, nano-needles, and gallium oxide thin films, which are relevant to applications in batteries, fuel cells, and solar cells.

Anwendung

Gallium(III) acetylacetonate can be used:
  • As a precursor to synthesize nanocrystalline gallium oxide spinels via solvothermal process for various applications like photocatalysis, battery cathode materials and electrocatalysis.
  • To fabricate LiGa alloy layer on Li metal anode from in-situ electroreduction. It suppresses the anode dendrite formation in lithium-sulfur batteries.
  • To prepare highly efficient gallium-platinum (GaPt3) nanoparticles hot-solvent synthesis which act as electrocatalysts for hydrogen evolution reaction.
  • To synthesize γ-Ga2O3 nanocrystals for fabricating electron-transporting layer for perovskite solar cells. It forms effective interfacial connections with the perovskite top layer, enhancing the efficiency of charge transport.

Piktogramme

Health hazardExclamation mark

Signalwort

Warning

Gefahreneinstufungen

Acute Tox. 4 Dermal - Acute Tox. 4 Inhalation - Acute Tox. 4 Oral - Carc. 2 - Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3

Zielorgane

Respiratory system

Lagerklassenschlüssel

11 - Combustible Solids

WGK

WGK 3

Flammpunkt (°F)

Not applicable

Flammpunkt (°C)

Not applicable

Persönliche Schutzausrüstung

dust mask type N95 (US), Eyeshields, Gloves


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Temperature-controlled catalytic growth of one-dimensional gallium nitride nanostructures using a gallium organometallic precursor
Chang KW,Wu JJ
Applied Physics. A, Materials Science & Processing, 77(6), 769-774 null
Growth of gallium oxide film from gallium acetylacetonate by atomic layer epitaxy.
Nieminen M,et al
Journal of Materials Chemistry, 6, 27-31 null
LowTemperature Catalytic Synthesis of Gallium Nitride Nanowires
The Journal of Physical Chemistry B, 106(32), 7796-7799 (2002)
Structural Crystallography and Crystal Chemistry
Dymock K and Palenik GJ
Acta Crystallographica Section B, Structural Crystallography and Crystal Chemistry, 30(5), 1364-1366 (1974)
Matthias Metzger et al.
Analytical and bioanalytical chemistry, 411(19), 4647-4660 (2019-03-09)
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