366870
Indium(III) phosphide
pieces, 3-20 mesh, 99.998% trace metals basis
Synonym(s):
Indium monophosphide, Indium phosphide
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About This Item
Linear Formula:
InP
CAS Number:
Molecular Weight:
145.79
EC Number:
MDL number:
UNSPSC Code:
12352300
PubChem Substance ID:
NACRES:
NA.23
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Quality Level
Assay
99.998% trace metals basis
form
pieces
reaction suitability
reagent type: catalyst
core: indium
particle size
3-20 mesh
SMILES string
P#[In]
InChI
1S/In.P
InChI key
GPXJNWSHGFTCBW-UHFFFAOYSA-N
Signal Word
Danger
Hazard Statements
Precautionary Statements
Hazard Classifications
Carc. 1B - Repr. 2 - STOT RE 1
Storage Class Code
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
WGK
WGK 3
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
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Alberto L D Moreau et al.
Biosensors & bioelectronics, 36(1), 62-68 (2012-04-28)
The development of highly-sensitive and label-free operating semiconductor-based, biomaterial detecting sensors has important applications in areas such as environmental science, biomedical research and medical diagnostics. In the present study, we developed an Indium Phosphide (InP) semiconductor-based resistive biosensor using the
Ilaria Bargigia et al.
Applied spectroscopy, 66(8), 944-950 (2012-07-18)
We present a new compact system for time-domain diffuse optical spectroscopy of highly scattering media operating in the wavelength range from 1100 nm to 1700 nm. So far, this technique has been exploited mostly up to 1100 nm: we extended
Xuan Zhang et al.
Nanotechnology, 23(27), 275103-275103 (2012-06-20)
Direct comparisons of different types of nanoparticles for drug delivery have seldom been performed. In this study we compare the physical properties and cellular activity of doxorubicin (Dox) conjugates to gold nanoparticles (Au) and InP quantum dots of comparable diameter.
Kouta Tateno et al.
Nano letters, 12(6), 2888-2893 (2012-05-19)
We investigated the Au-assisted growth of alternating InAsP/InP heterostructures in wurtzite InP nanowires on InP(111)B substrates for constructing multiple-quantum-dot structures. Vertical InP nanowires without stacking faults were obtained at a high PH(3)/TMIn mole flow ratio of 300-1000. We found that
Myung-Joon Kwack et al.
Optics express, 20(27), 28734-28741 (2012-12-25)
A strictly non-blocking 8 × 8 switch for high-speed WDM optical interconnection is realized on InP by using the phased-array scheme for the first time. The matrix switch architecture consists of over 200 functional devices such as star couplers, phase-shifters
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