Direkt zum Inhalt
Merck
Alle Fotos(1)

Wichtige Dokumente

Gesamtdokumentation anzeigen

651494

Sigma-Aldrich

Gallium-Phosphid

(single crystal substrate), <111>, diam. × thickness 2 in. × 0.5 mm

Synonym(e):

Gallium monophosphide

Anmeldenzur Ansicht organisationsspezifischer und vertraglich vereinbarter Preise
Alle Fotos(1)

About This Item

Lineare Formel:
GaP
CAS-Nummer:
12063-98-8
Molekulargewicht:
100.70
EG-Nummer:
235-057-2
MDL-Nummer:
MFCD00016109
UNSPSC-Code:
12352300
PubChem Substanz-ID:
24883833
NACRES:
NA.23

Form

(single crystal substrate)

Widerstandsfähigkeit

~0.3 Ω-cm

Durchm. × Dicke

2 in. × 0.5 mm

mp (Schmelzpunkt)

1480 °C

Dichte

4.13 g/mL at 25 °C

Halbleitereigenschaften

<111>

SMILES String

[P]#[Ga]

InChI

1S/Ga.P

InChIKey

HZXMRANICFIONG-UHFFFAOYSA-N

Suchen Sie nach ähnlichen Produkten? Aufrufen Leitfaden zum Produktvergleich

Physikalische Eigenschaften

Thermal expansion: 5.3 x 10-6/°C
Undoped (N-type semiconductor), carrier concentration = 2-6 × 1016 cm-3, EPD < 3 × 105 cm-2, growth technique = LEC

Physikalische Form

cubic (a = 5.4505Å)

Piktogramme

Exclamation mark
GHS07

Signalwort

Warning

H-Sätze

H319,H335

Gefahreneinstufungen

Eye Irrit. 2 - STOT SE 3

Zielorgane

Respiratory system

Lagerklassenschlüssel

11 - Combustible Solids

WGK

WGK 2

Flammpunkt (°F)

Not applicable

Flammpunkt (°C)

Not applicable

Persönliche Schutzausrüstung

dust mask type N95 (US), Eyeshields, Gloves

Hier finden Sie alle aktuellen Versionen:

Analysenzertifikate (COA)

Lot/Batch Number
MKBX6897V
MKBW8491V
10819AD

Die passende Version wird nicht angezeigt?

Wenn Sie eine bestimmte Version benötigen, können Sie anhand der Lot- oder Chargennummer nach einem spezifischen Zertifikat suchen.

Suche nach COA

Besitzen Sie dieses Produkt bereits?

In der Dokumentenbibliothek finden Sie die Dokumentation zu den Produkten, die Sie kürzlich erworben haben.

Die Dokumentenbibliothek aufrufen

Jian Wu et al.
Nano letters, 9(9), 3252-3257 (2009-08-15)
We report the first observation of stimulated Raman scattering (SRS) from semiconductor nanowires (SNWs). Using continuous wave (CW) excitation (514.5 nm), very strong nonlinear SRS was observed in backscattering from short segments of crystalline GaP NWs with diameter d =
I Cestier et al.
Optics express, 19(7), 6093-6099 (2011-04-01)
We describe dynamical four wave mixing (FWM) functionalities of an GaInP photonic crystal waveguide. A W1 waveguide was used to wavelength convert 100 ps pulses and for sampling a 10.56 Gbit/s data stream so as to time demultiplex it into
G Chen et al.
Nano letters, 8(5), 1341-1346 (2008-04-22)
We report on investigations of the interaction of light with nanoscale antennae made from crystalline GaP nanowires (NWs). Using Raman scattering, we have observed strong optical antenna effects which we identify with internal standing wave photon modes of the wire.
I Cestier et al.
Optics express, 18(6), 5746-5753 (2010-04-15)
We report a large nonlinear response in a 1.3mm long GaInP photonic crystal waveguide. The wide band gap of GaInP (1.9 eV) ensures that no two photon absorption takes place for photons at 1.55mm improving the nonlinear performance. The nonlinearity
E G van Putten et al.
Physical review letters, 106(19), 193905-193905 (2011-06-15)
The smallest structures that conventional lenses are able to optically resolve are of the order of 200 nm. We introduce a new type of lens that exploits multiple scattering of light to generate a scanning nanosized optical focus. With an
Alle zugehörigen Dokumente anzeigen

Artikel

Building and Engineering Micro/Nano Architectures of Single-Walled Carbon Nanotubes for Electronic Applications

Building and Engineering Micro/Nano Architectures of Single-Walled Carbon Nanotubes for Electronic Applications

FePt Nanogranular films for high density heat-assisted magnetic recording

A hard disk drive (HDD) is a data storage device that stores digital information by magnetizing nanosized magnets on flat disks and retrieves data by sensing the resulting magnetic field.

Recent Progress in Spintronic Materials

Spin-based electronic (spintronic) devices offer significant improvement to the limits of conventional charge-based memory and logic devices which suffer from high power usage, leakage current, performance saturation, and device complexity.

Protokolle

Negative Photoresist Procedure

Negative Photoresist Procedure

Unser Team von Wissenschaftlern verfügt über Erfahrung in allen Forschungsbereichen einschließlich Life Science, Materialwissenschaften, chemischer Synthese, Chromatographie, Analytik und vielen mehr..

Setzen Sie sich mit dem technischen Dienst in Verbindung.