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264032

Sigma-Aldrich

Indium

powder, −100 mesh, 99.99% trace metals basis

Synonyme(s) :

Indium element

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About This Item

Formule empirique (notation de Hill):
In
Numéro CAS:
7440-74-6
Poids moléculaire :
114.82
Numéro CE :
231-180-0
Numéro MDL:
MFCD00134048
Code UNSPSC :
12141719
ID de substance PubChem :
24855900
Nomenclature NACRES :
NA.23

Pression de vapeur

<0.01 mmHg ( 25 °C)

Pureté

99.99% trace metals basis

Forme

powder

Résistivité

8.37 μΩ-cm

Taille des particules

−100 mesh

Pf

156.6 °C (lit.)

Densité

7.3 g/mL at 25 °C (lit.)

Chaîne SMILES 

[In]

InChI

1S/In

Clé InChI

APFVFJFRJDLVQX-UHFFFAOYSA-N

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Description générale

Indium,a rare and stable element, exhibits exceptional properties such as high thermaland electrical conductivity. It finds application in diverse alloys, batteryproduction, and the synthesis of indium tin oxide, essential for transparentelectrodes in LCDs and touchscreens. Additionally, Indium is utilized in theproduction of solar cells, LEDs, and other optoelectronic devices.

Application


  • Indium-containing semiconductors: Discusses the role of indium in semiconductor technology, relevant for both academia and material science, focusing on its application in indium-tin oxide and other indium compounds (Schwarz‐Schampera, 2014).

  • Recovery of indium from liquid crystal displays: This article presents methods for the recovery of indium from waste electronics, an area of significant interest for sustainable chemistry and materials science (Rocchetti et al., 2016).

  • The oxidation and surface speciation of indium and indium oxides exposed to atmospheric oxidants: Explores the chemical properties and reactions of indium in various oxidation states, relevant to environmental and materials chemistry (Detweiler et al., 2016).

Pictogrammes

FlameExclamation mark
GHS02,GHS07

Mention d'avertissement

Danger

Mentions de danger

H228,H315,H319,H332,H335

Classification des risques

Acute Tox. 4 Inhalation - Eye Irrit. 2 - Flam. Sol. 1 - Skin Irrit. 2 - STOT SE 3

Organes cibles

Respiratory system

Code de la classe de stockage

4.1B - Flammable solid hazardous materials

Classe de danger pour l'eau (WGK)

WGK 3

Équipement de protection individuelle

Eyeshields, Gloves, type P3 (EN 143) respirator cartridges

Certificats d'analyse (COA)

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Consulter la Bibliothèque de documents

A facile synthesis of 7-amino-3-desacetoxycephalosporanic acid derivatives by indium-mediated reduction of 3-iodomethylcephems in aqueous media.
Chae H, et al.
Tetrahedron Letters, 41(20), 3899-3901 (2000)
Ching-Hwa Ho et al.
ACS applied materials & interfaces, 5(6), 2269-2277 (2013-03-05)
The surface formation oxide assists of visible to ultraviolet photoelectric conversion in α-In2Se3 hexagonal microplates has been explored. Hexagonal α-In2Se3 microplates with the sizes of 10s to 100s of micrometers were synthesized and prepared by the chemical vapor transport method
Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
Annick Bay et al.
Optics express, 21 Suppl 1, A179-A189 (2013-02-15)
In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from the diode's high refractive-index active material. The layer
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
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