Skip to Content
Merck
All Photos(2)

Documents

688509

Sigma-Aldrich

Silicon tetrachloride

packaged for use in deposition systems

Synonym(s):

STC, Tetrachlorosilane

Sign Into View Organizational & Contract Pricing
All Photos(2)

About This Item

Linear Formula:
SiCl4
CAS Number:
10026-04-7
Molecular Weight:
169.90
MDL number:
MFCD00011229
UNSPSC Code:
12352103
PubChem Substance ID:
329761169
NACRES:
NA.23

vapor density

5.86 (vs air)

vapor pressure

420 mmHg ( 37.7 °C)

Assay

99.998% trace metals basis

form

liquid

reaction suitability

core: silicon

bp

57.6 °C (lit.)

mp

−70 °C (lit.)

density

1.483 g/mL at 25 °C (lit.)

SMILES string

Cl[Si](Cl)(Cl)Cl

InChI

1S/Cl4Si/c1-5(2,3)4

InChI key

FDNAPBUWERUEDA-UHFFFAOYSA-N

Looking for similar products? Visit Product Comparison Guide

General description

Atomic number of base material: 14 Silicon

Application

Precursors Packaged for Depositions Systems

Pictograms

Skull and crossbonesCorrosion
GHS06,GHS05

Signal Word

Danger

Hazard Statements

H301 + H331,H314,H335

Hazard Classifications

Acute Tox. 3 Inhalation - Acute Tox. 3 Oral - Eye Dam. 1 - Skin Corr. 1A - STOT SE 3

Target Organs

Respiratory system

Supplementary Hazards

EUH014,EUH071

Storage Class Code

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

WGK

WGK 1

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

Already Own This Product?

Find documentation for the products that you have recently purchased in the Document Library.

Visit the Document Library

J R Piascik et al.
Dental materials : official publication of the Academy of Dental Materials, 25(9), 1116-1121 (2009-04-21)
The overall goal of this research was to develop a practical method to chemically modify the surface of high strength dental ceramics (i.e. zirconia) to facilitate viable, robust adhesive bonding using commercially available silanes and resin cements. Investigation focused on
Sherif Zein El Abedin et al.
Accounts of chemical research, 40(11), 1106-1113 (2007-05-25)
Due to their wide thermal windows, ionic liquids can be regarded as the missing link between aqueous/organic solutions and high-temperature molten salts. They can be employed efficiently for the coating of other metals with thin layers of tantalum, aluminum, and
Roman A Sandler et al.
Journal of vision, 15(9), 16-16 (2015-08-01)
Receptive field identification is a vital problem in sensory neurophysiology and vision. Much research has been done in identifying the receptive fields of nonlinear neurons whose firing rate is determined by the nonlinear interactions of a small number of linear
C Schulze Isfort et al.
Toxicology letters, 186(3), 148-151 (2008-12-31)
Synthetic nanoscaled metal oxides are mainly produced by pyrogenic decomposition of precursors in the gas phase using a hot-wall or plasma reactor. Due to their low production rate and limited scalability, these processes are of minor technical relevance in manufacturing
Baker Jawabrah Al-Hourani et al.
Bioorganic & medicinal chemistry letters, 22(6), 2235-2238 (2012-02-22)
A series of novel 5-substituted 1H-tetrazoles as cyclooxygenase-2 (COX-2) inhibitors was prepared via treatment of various diaryl amides with tetrachlorosilane/sodium azide. All compounds were tested in cyclooxygenase (COX) assays in vitro to determine COX-1 and COX-2 inhibitory potency and selectivity.
View All Related Papers

Articles

The Savannah ALD System - An Excellent Tool for Atomic Layer Deposition

igma-Aldrich.com presents an article regarding the savannah ALD system - an excellent tool for atomic layer deposition.

Silicon Nitride Atomic Layer Deposition: A Brief Review of Precursor Chemistry

atomic layer deposition (ALD), microelectronics, Mo:Al2O3 films, nanocomposite coating, photovoltaics, semiconductor devices, W:Al2O3 films, composite films, layer-by-layer

High Purity Metalorganic Precursors for CPV Device Fabrication

High Purity Metalorganic Precursors for CPV Device Fabrication

Recent Progress in Spintronic Materials

Spin-based electronic (spintronic) devices offer significant improvement to the limits of conventional charge-based memory and logic devices which suffer from high power usage, leakage current, performance saturation, and device complexity.

See All

Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.

Contact Technical Service