241903
Aluminum nitride
powder, 10 μm, ≥98%
Synonym(s):
Aluminium nitride, Azanylidynealumane
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About This Item
Linear Formula:
AlN
CAS Number:
Molecular Weight:
40.99
EC Number:
MDL number:
UNSPSC Code:
12352300
PubChem Substance ID:
NACRES:
NA.23
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Assay
≥98%
form
powder
particle size
10 μm
mp
>2200 °C (lit.)
density
3.26 g/mL at 25 °C (lit.)
SMILES string
N#[Al]
InChI
1S/Al.N
InChI key
PIGFYZPCRLYGLF-UHFFFAOYSA-N
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General description
Aluminum Nitride(AlN) is a non-oxide semiconductor material with a hexagonal Wurtzite crystal structure. It has a wide direct bandgap of 6.12 eV. AIN is a suitable additive in making thermal grease and electric cable insulation owing to its very high thermal conductivity (300 W/(m. K)) and electrical resistivity. It is also used in microelectronics, electroluminescent devices, and sensors because of its non-toxicity, superior thermal, electrical, mechanical, and chemical properties.
Application
Aluminum Nitride can be used as a:
- ceramic material in the preparation of nano capsulated phase change material for building thermal management systems.
- matrix in the preparation of metacomposites along with graphene platelets to improve their thermal conductive properties.
- foaming agent in the preparation of foam glass using glass waste.
Signal Word
Danger
Hazard Statements
Precautionary Statements
Hazard Classifications
Aquatic Acute 1 - Aquatic Chronic 1 - STOT RE 1 Inhalation
Target Organs
Lungs
Storage Class Code
4.3 - Hazardous materials which set free flammable gases upon contact with water
WGK
WGK 3
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
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Novel hybrid composite phase change materials with high thermal performance based on aluminium nitride and nanocapsules
Lu Wang, et al.
Energy, 238, 121775-121775 (2022)
Band structure and fundamental optical transitions in wurtzite AlN
Li, Jing, et al.
Applied Physics Letters, 83(25), 5163-5165 (2003)
Mohammad T Baei et al.
Journal of molecular modeling, 18(9), 4477-4489 (2012-05-31)
Structural, electronic, and electrical responses of the H-capped (6,0) zigzag single-walled aluminum nitride nanotube was studied under the parallel and transverse electric fields with strengths 0-140 × 10(-4) a.u. by using density functional calculations. Geometry optimizations were carried out at the B3LYP/6-31G* level
Norio Iizuka et al.
Optics express, 17(25), 23247-23253 (2010-01-07)
Spot-size converters for an all-optical switch utilizing the intersubband transition in GaN/AlN multiple quantum wells are studied with the purpose of reducing operation power by improving the coupling efficiency between the input fiber and the switch. With a stair-like spot-size
Javad Beheshtian et al.
Journal of molecular modeling, 18(10), 4745-4750 (2012-06-09)
Single-walled aluminum nitride nanotubes (AlNNTs) are introduced as an electronic sensor for detection of sulfur dioxide (SO₂) molecules based on density functional theory calculations. The proposed sensor benefits from several advantages including high sensitivity: HOMO-LUMO energy gap of the AlNNT
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