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579211

Sigma-Aldrich

Tetrakis(dimethylamido)zirconium(IV)

electronic grade, ≥99.99% trace metals basis

Sinónimos:

TDMAZ, Tetrakis(dimethylamino)zirconium(IV)

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About This Item

Fórmula lineal:
[(CH3)2N]4Zr
Número de CAS:
19756-04-8
Peso molecular:
267.53
MDL number:
MFCD00239502
UNSPSC Code:
12352103
PubChem Substance ID:
24880977
NACRES:
NA.23

grade

electronic grade

Quality Level

100

assay

≥99.99% trace metals basis

form

solid

reaction suitability

core: zirconium

mp

57-60 °C (lit.)

storage temp.

2-8°C

SMILES string

CN(C)[Zr](N(C)C)(N(C)C)N(C)C

InChI

1S/4C2H6N.Zr/c4*1-3-2;/h4*1-2H3;/q4*-1;+4

InChI key

DWCMDRNGBIZOQL-UHFFFAOYSA-N

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Application

Tetrakis(dimethylamido) zirconium (IV) may be used as a precursor for atomic layer deposition of zirconium which find applications ranging from gas sensors to high-k dielectrics in microelectronics.

pictograms

FlameExclamation mark
GHS02,GHS07

signalword

Danger

Hazard Classifications

Eye Irrit. 2 - Flam. Sol. 1 - Skin Irrit. 2 - STOT SE 3 - Water-react 2

target_organs

Respiratory system

supp_hazards

EUH014

Storage Class

4.3 - Hazardous materials which set free flammable gases upon contact with water

wgk_germany

WGK 3

flash_point_f

No data available

flash_point_c

No data available

ppe

Eyeshields, Gloves, type P3 (EN 143) respirator cartridges

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Certificados de análisis (COA)

Lot/Batch Number
SHBM7138
SHBL7399
SHBL7405
SHBL4712
SHBL0621

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Atomic layer deposition of ZrO2 and HfO2 nanotubes by template replication
Gu D, et al.
Electrochemical and Solid-State Letters, 12.4, K25-K28 (2009)
Surface morphology and crystallinity control in the atomic layer deposition (ALD) of hafnium and zirconium oxide thin films.
Hausmann DM & Gordon RG
Journal of Crystal Growth, 249.1, 251-261 (2003)

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