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Ting Cao et al.
Nature communications, 3, 887-887 (2012-06-08)
A two-dimensional honeycomb lattice harbours a pair of inequivalent valleys in the k-space electronic structure, in the vicinities of the vertices of a hexagonal Brillouin zone, K(±). It is particularly appealing to exploit this emergent degree of freedom of charge
Atomic-scale edge structures on industrial-style MoS2 nanocatalysts.
Lars P Hansen et al.
Angewandte Chemie (International ed. in English), 50(43), 10153-10156 (2011-10-25)
Photoconductivity of solution-processed MoS 2 films.
Cunningham G, et al.
Journal of Material Chemistry C, 1(41), 6899-6904 (2013)
Elastic properties of freely suspended MoS2 nanosheets.
Andres Castellanos-Gomez et al.
Advanced materials (Deerfield Beach, Fla.), 24(6), 772-775 (2012-01-11)
Dominik Lembke et al.
ACS nano, 6(11), 10070-10075 (2012-10-09)
Two-dimensional (2D) materials such as monolayer molybdenum disulfide (MoS(2)) are extremely interesting for integration in nanoelectronic devices where they represent the ultimate limit of miniaturization in the vertical direction. Thanks to the presence of a band gap and subnanometer thickness
Peiyu Ge et al.
Chemical communications (Cambridge, England), 48(52), 6484-6486 (2012-05-26)
The activities of a series of MoS(2)-based hydrogen evolution catalysts were studied by biphasic reactions monitored by UV/Vis spectroscopy. Carbon supported MoS(2) catalysts performed best due to an abundance of catalytic edge sites and strong electronic coupling of catalyst to
Dattatray J Late et al.
ACS nano, 6(6), 5635-5641 (2012-05-15)
Field effect transistors using ultrathin molybdenum disulfide (MoS(2)) have recently been experimentally demonstrated, which show promising potential for advanced electronics. However, large variations like hysteresis, presumably due to extrinsic/environmental effects, are often observed in MoS(2) devices measured under ambient environment.
Yi-Hsien Lee et al.
Advanced materials (Deerfield Beach, Fla.), 24(17), 2320-2325 (2012-04-03)
Large-area MoS(2) atomic layers are synthesized on SiO(2) substrates by chemical vapor deposition using MoO(3) and S powders as the reactants. Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS(2) monolayer. The TEM
Optical limiting of layered transition metal dichalcogenide semiconductors
Dong N,et al.
ARKIVOC (Gainesville, FL, United States) null
Branimir Radisavljevic et al.
ACS nano, 5(12), 9934-9938 (2011-11-15)
Logic circuits and the ability to amplify electrical signals form the functional backbone of electronics along with the possibility to integrate multiple elements on the same chip. The miniaturization of electronic circuits is expected to reach fundamental limits in the
Manuel G Basallote et al.
Inorganic chemistry, 51(12), 6794-6802 (2012-06-07)
The [Mo(3)S(4)Cl(3)(dhprpe)(3)](+) (1(+)) cluster cation has been prepared by reaction between Mo(3)S(4)Cl(4)(PPh(3))(3) (solvent)(2) and the water-soluble 1,2-bis(bis(hydroxypropyl)phosphino)ethane (dhprpe, L) ligand. The crystal structure of [1](2)[Mo(6)Cl(14)] has been determined by X-ray diffraction methods and shows the typical incomplete cuboidal structure with
Deep Jariwala et al.
Proceedings of the National Academy of Sciences of the United States of America, 110(45), 18076-18080 (2013-10-23)
The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses.
Han Wang et al.
Nano letters, 12(9), 4674-4680 (2012-08-07)
Two-dimensional (2D) materials, such as molybdenum disulfide (MoS(2)), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS(2) allows it to overcome the shortcomings of zero-bandgap graphene, while still sharing many of graphene's advantages for
Sivacarendran Balendhran et al.
Nanoscale, 4(2), 461-466 (2011-11-09)
Two dimensional molybdenum disulfide (MoS(2)) has recently become of interest to semiconductor and optic industries. However, the current methods for its synthesis require harsh environments that are not compatible with standard fabrication processes. We report on a facile synthesis method
Branimir Radisavljevic et al.
Nature materials, 12(9), 815-820 (2013-06-25)
Two-dimensional (2D) materials are a new class of materials with interesting physical properties and applications ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered materials such as semiconducting dichalcogenides
Kapildeb Dolui et al.
ACS nano, 6(6), 4823-4834 (2012-05-02)
Ab initio density functional theory calculations are performed to investigate the electronic structure of MoS(2) armchair nanoribbons in the presence of an external static electric field. Such nanoribbons, which are nonmagnetic and semiconducting, exhibit a set of weakly interacting edge
Ying Ying Wang et al.
Nanotechnology, 23(49), 495713-495713 (2012-11-17)
Two-dimensional materials, e.g. graphene and molybdenum disulfide (MoS(2)), have attracted great interest in recent years. Identification of the thickness of two-dimensional materials will improve our understanding of their thickness-dependent properties, and also help with scientific research and applications. In this
Shujiang Ding et al.
Nanoscale, 4(1), 95-98 (2011-11-26)
In this work, we demonstrate an interesting polystyrene microsphere-assisted synthesis of hierarchical MoS(2) spheres composed of ultrathin nanosheets. The as-prepared sample exhibits promising lithium storage properties with improved cyclic capacity retention and rate capability.
Woong Choi et al.
Advanced materials (Deerfield Beach, Fla.), 24(43), 5832-5836 (2012-08-21)
Phototransistors based on multilayer MoS(2) crystals are demonstrated with a wider spectral response and higher photoresponsivity than single-layer MoS(2) phototransistors. Multilayer MoS(2) phototransistors further exhibit high room temperature mobilities (>70 cm(2) V(-1) s(-1) ), near-ideal subthreshold swings (~70 mV decade(-1)
Ya Yan et al.
Nanoscale, 5(17), 7768-7771 (2013-07-26)
In this work, a networked MoS2/CNT nanocomposite has been synthesized by a facile solvothermal method. The as-prepared sample exhibits high catalytic activity for electrocatalytic hydrogen evolution.
Haesuk Hwang et al.
Nano letters, 11(11), 4826-4830 (2011-10-01)
MoS(2) nanoplates, consisting of disordered graphene-like layers, with a thickness of ∼30 nm were prepared by a simple, scalable, one-pot reaction using Mo(CO)(6) and S in an autoclave. The product has a interlayer distance of 0.69 nm, which is much
Xi Wang et al.
Water science and technology : a journal of the International Association on Water Pollution Research, 67(12), 2845-2849 (2013-06-22)
A novel visible light-driven photocatalyst film, MoS₂/Ag/TiO₂, was synthesized on a glass-fiber membrane. The composite catalyst film had a multi-layer structure with Ag as nanoconjunctions between the MoS₂ and TiO₂ layers. The catalyst film performed well for both photocatalytic hydrogen
Stanley S Chou et al.
Journal of the American Chemical Society, 135(12), 4584-4587 (2013-03-12)
MoS2 is a two-dimensional material that is gaining prominence due to its unique electronic and chemical properties. Here, we demonstrate ligand conjugation of chemically exfoliated MoS2 using thiol chemistry. With this method, we modulate the ζ-potential and colloidal stability of
MoS2 nanosheets for top-gate nonvolatile memory transistor channel.
Hee Sung Lee et al.
Small (Weinheim an der Bergstrasse, Germany), 8(20), 3111-3115 (2012-08-02)
Doeun Lee et al.
Nanotechnology, 31(22), 225504-225504 (2020-02-19)
In the present study, phase-dependent gas sensitivities of MoS2 chemical sensors were examined. While 1T-phase MoS2 (1T-MoS2) has shown better chemical sensitivity than has 2H-phase MoS2 (2H-MoS2), the instability of the 1T phase has been hindering applications of 1T-MoS2 as
Inkjet Printing of MoS2
Li J, et al.
Advances in Functional Materials, 24(14), 6524- 6531 (2014)
A Castellanos-Gomez et al.
Nano letters, 12(6), 3187-3192 (2012-05-31)
Single-layer MoS(2) is an attractive semiconducting analogue of graphene that combines high mechanical flexibility with a large direct bandgap of 1.8 eV. On the other hand, bulk MoS(2) is an indirect bandgap semiconductor similar to silicon, with a gap of
Biomimetic oxygen activation by MoS2/Ta3N5 nanocomposites for selective aerobic oxidation.
Qingsheng Gao et al.
Angewandte Chemie (International ed. in English), 51(47), 11740-11744 (2012-10-17)
Haotian Wang et al.
Proceedings of the National Academy of Sciences of the United States of America, 110(49), 19701-19706 (2013-11-20)
The ability to intercalate guest species into the van der Waals gap of 2D layered materials affords the opportunity to engineer the electronic structures for a variety of applications. Here we demonstrate the continuous tuning of layer vertically aligned MoS2
Simone Bertolazzi et al.
ACS nano, 5(12), 9703-9709 (2011-11-18)
We report on measurements of the stiffness and breaking strength of monolayer MoS(2), a new semiconducting analogue of graphene. Single and bilayer MoS(2) is exfoliated from bulk and transferred to a substrate containing an array of microfabricated circular holes. The
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