推荐产品
等級
electronic grade
化驗
≥99.998% chemical purity basis
形狀
gas
雜質
≤50 ppm Higher silanes
<0.2 ppm Chlorosilanes
<1 ppm Argon (Ar) + Oxygen (O2)
<1 ppm Carbon dioxide (CO2)
<1 ppm Nitrogen (N2)
<1 ppm THC
<1 ppm Water
<5 ppm Siloxanes
bp
−14.5 °C (lit.)
mp
−132.6 °C (lit.)
轉變溫度
critical temperature 150.9 °C
SMILES 字串
[SiH3][SiH3]
InChI
1S/H6Si2/c1-2/h1-2H3
InChI 密鑰
PZPGRFITIJYNEJ-UHFFFAOYSA-N
一般說明
Atomic number of base material: 14 Silicon
應用
外延硅和硅基电介质快速低温沉积的前体。
特點和優勢
通过快速低温化学气相沉积 (LTCVD),本品可用于无定形硅、外延硅和硅基电介质的沉积。通过分子束外延 (MBE),与锗的固体原料相结合,还可用于硅锗薄膜的外延生长。外延硅和硅基电介质快速低温沉积的前体。
訊號詞
Danger
危險分類
Acute Tox. 4 Dermal - Eye Irrit. 2 - Flam. Gas 1B - Press. Gas Liquefied gas - Resp. Sens. 1 - Skin Irrit. 2 - STOT SE 3
標靶器官
Respiratory system
儲存類別代碼
2A - Gases
水污染物質分類(WGK)
WGK 3
閃點(°F)
<50.0 °F - closed cup
閃點(°C)
< 10 °C - closed cup
個人防護裝備
Eyeshields, Faceshields, Gloves, multi-purpose combination respirator cartridge (US)
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