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764639

Sigma-Aldrich

5,5′′′-Bis(tridecafluorohexyl)-2,2′:5′,2 ′′:5′′,2′′′-quaterthiophene

Sinonimo/i:

α,ω-Diperfluorohexyl-quarterthiophene, DFH-4T

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About This Item

Formula empirica (notazione di Hill):
C28H8F26S4
Numero CAS:
446043-85-2
Peso molecolare:
966.58
Numero MDL:
MFCD23098728
Codice UNSPSC:
12352103
ID PubChem:
329767133
NACRES:
NA.23

Forma fisica

solid

Livello qualitativo

100

Punto di fusione

205-210 °C

Caratteristiche del semiconduttore

N-type (mobility≤0.64 cm2/V·s)

Stringa SMILE

FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)c1ccc(s1)-c2ccc(s2)-c3ccc(s3)-c4ccc(s4)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

InChI

1S/C28H8F26S4/c29-17(30,19(33,34)21(37,38)23(41,42)25(45,46)27(49,50)51)15-7-5-13(57-15)11-3-1-9(55-11)10-2-4-12(56-10)14-6-8-16(58-14)18(31,32)20(35,36)22(39,40)24(43,44)26(47,48)28(52,53)54/h1-8H
UBMTYFFPSPVBSP-UHFFFAOYSA-N

Categorie correlate

Descrizione generale

5,5′′′-Bis(tridecafluorohexyl)-2,2′:5′,2′′:5′′,2′′′-quaterthiophene (DFH-4T) is a n-type semiconducting material. It is a quaterthiophene derivative that contains fluoroalkyl groups and can be used as an electron transporting layer. It can be used in organic electronics.

Applicazioni

This molecule has shown high mobilities (electron mobilities of up to 0.64 cm2/Vs) when used as an n-type semiconducting material in OFET devices.

Codice della classe di stoccaggio

11 - Combustible Solids

Classe di pericolosità dell'acqua (WGK)

WGK 3

Punto d’infiammabilità (°F)

Not applicable

Punto d’infiammabilità (°C)

Not applicable

Certificati d'analisi (COA)

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A new method of using supercritical carbon dioxide as a green solvent for synthesis and purification of 5, 5?-bis (tridecafluorohexyl)-2, 2?: 5?, 2 ?: 5 ?, 2?-quaterthiophene, which is one of n-type organic semiconducting materials
Hirase R, et al.
Tetrahedron Letters, 59(5), 469-472 (2018)
Hakan Usta et al.
Accounts of chemical research, 44(7), 501-510 (2011-05-28)
Organic semiconductors have unique properties compared to traditional inorganic materials such as amorphous or crystalline silicon. Some important advantages include their adaptability to low-temperature processing on flexible substrates, low cost, amenability to high-speed fabrication, and tunable electronic properties. These features
Overlapping-Gate Organic Light-Emitting Transistors
Lee J, et al.
Advanced Electronic Materials, 5(1), 1800437-1800437 (2019)

Articoli

Polymer Semiconductors for Intrinsically Stretchable Organic Transistors

Intrinsically stretchable active layers for organic field-effect transistors (OFET) are discussed. Polymer structural modification & post-polymerization modifications are 2 methods to achieve this.

Development of Small Molecule Donors for Solution-Processed Organic Solar Cells

Solution-processed organic photovoltaic devices (OPVs) have emerged as a promising clean energy generating technology due to their ease of fabrication, potential to enable low-cost manufacturing via printing or coating techniques, and ability to be incorporated onto light weight, flexible substrates.

Soluble Pentacene Precursors

Fabrication procedure of organic field effect transistor device using a soluble pentacene precursor.

Flexible Organic Transistors for Biomedical Applications

There is widespread demand for thin, lightweight, and flexible electronic devices such as displays, sensors, actuators, and radio-frequency identification tags (RFIDs). Flexibility is necessary for scalability, portability, and mechanical robustness.

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